All MOSFET. TK9P65W Datasheet

 

TK9P65W MOSFET. Datasheet pdf. Equivalent

Type Designator: TK9P65W

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 80 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V

Maximum Drain Current |Id|: 9.3 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 20 nC

Rise Time (tr): 16 nS

Drain-Source Capacitance (Cd): 20 pF

Maximum Drain-Source On-State Resistance (Rds): 0.56 Ohm

Package: DPAK

TK9P65W Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK9P65W Datasheet (PDF)

0.1. tk9p65w.pdf Size:379K _toshiba

TK9P65W TK9P65W

TK9P65W MOSFETs Silicon N-Channel MOS (DTMOS) TK9P65W TK9P65W TK9P65W TK9P65W 1. Applications 1. Applications 1. Applications 1. Applications • Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.46 Ω(typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement

Datasheet: TK8P60W5 , TK8P65W , TK8Q60W , TK8Q65W , TK90S06N1L , TK9A65W , TK9A90E , TK9J90E , IRF9Z34 , TK9Q65W , TMA7N90 , TMAN10N80 , TMAN11N90AZ , TMAN11N90Z , TMAN12N80AZ , TMAN12N80Z , TMAN15N50 .

 

 
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