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TK9P65W Spec and Replacement


   Type Designator: TK9P65W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.56 Ohm
   Package: DPAK

 TK9P65W Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK9P65W Specs

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TK9P65W

TK9P65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK9P65W TK9P65W TK9P65W TK9P65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.46 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhancement... See More ⇒

Detailed specifications: TK8P60W5 , TK8P65W , TK8Q60W , TK8Q65W , TK90S06N1L , TK9A65W , TK9A90E , TK9J90E , STP65NF06 , TK9Q65W , TMA7N90 , TMAN10N80 , TMAN11N90AZ , TMAN11N90Z , TMAN12N80AZ , TMAN12N80Z , TMAN15N50 .

History: IPP110N20NA | MRF177M

Keywords - TK9P65W MOSFET specs

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