TK9Q65W MOSFET Datasheet: N-Ch, 650V, 9.3A. Full specification with pinout and replacement list

TK9Q65W Specs and Replacement

Type Designator: TK9Q65W

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 80 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.56 Ohm

Package: IPAK

TK9Q65W substitution

- MOSFET ⓘ Cross-Reference Search

TK9Q65W datasheet

..1. Size:381K toshiba
tk9q65w.pdf pdf_icon

TK9Q65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK9Q65W TK9Q65W TK9Q65W TK9Q65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.46 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhancement... See More ⇒

..2. Size:234K inchange semiconductor
tk9q65w.pdf pdf_icon

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK9Q65W ITK9Q65W FEATURES Low drain-source on-resistance RDS(on) 0.56 . Enhancement mode Vth =2.5 to 3.5V (VDS = 10 V, ID=0.35mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25... See More ⇒

Detailed specifications: TK8P65W, TK8Q60W, TK8Q65W, TK90S06N1L, TK9A65W, TK9A90E, TK9J90E, TK9P65W, IRF1405, TMA7N90, TMAN10N80, TMAN11N90AZ, TMAN11N90Z, TMAN12N80AZ, TMAN12N80Z, TMAN15N50, TMAN16N60