All MOSFET. TK9Q65W Datasheet

 

TK9Q65W Datasheet and Replacement


   Type Designator: TK9Q65W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.56 Ohm
   Package: IPAK
 

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TK9Q65W Datasheet (PDF)

 ..1. Size:381K  toshiba
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TK9Q65W

TK9Q65WMOSFETs Silicon N-Channel MOS (DTMOS)TK9Q65WTK9Q65WTK9Q65WTK9Q65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.46 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhancement

 ..2. Size:234K  inchange semiconductor
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TK9Q65W

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK9Q65WITK9Q65WFEATURESLow drain-source on-resistance:RDS(on) 0.56.Enhancement mode:Vth =2.5 to 3.5V (VDS = 10 V, ID=0.35mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25

Datasheet: TK8P65W , TK8Q60W , TK8Q65W , TK90S06N1L , TK9A65W , TK9A90E , TK9J90E , TK9P65W , IRF1405 , TMA7N90 , TMAN10N80 , TMAN11N90AZ , TMAN11N90Z , TMAN12N80AZ , TMAN12N80Z , TMAN15N50 , TMAN16N60 .

Keywords - TK9Q65W MOSFET datasheet

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