All MOSFET. TMAN12N80AZ Datasheet

 

TMAN12N80AZ Datasheet and Replacement


   Type Designator: TMAN12N80AZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 416 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: TO-3PN
 

 TMAN12N80AZ substitution

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TMAN12N80AZ Datasheet (PDF)

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TMAN12N80AZ

TMAN12N80AZ N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 800V 12A

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TMAN12N80AZ

TMAN12N80Z N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 800V 12A

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TMAN12N80AZ

TMAN11N90Z N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 900V 11A

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TMAN12N80AZ

TMAN10N80 VDSS = 880 V @Tjmax Features ID = 10A Low gate charge RDS(on) = 1.05 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification D G S Device Package Marking Remark TMAN10N80 TO-3P TMAN10N80 RoHS Absolute Maximum Ratings Parameter Symbol TMAN10N80 Unit Drain-Source Voltage VDS 900 V Gate-

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Datasheet: TK9A90E , TK9J90E , TK9P65W , TK9Q65W , TMA7N90 , TMAN10N80 , TMAN11N90AZ , TMAN11N90Z , 60N06 , TMAN12N80Z , TMAN15N50 , TMAN16N60 , TMAN16N60A , TMAN20N50 , TMAN20N50A , TMAN20N60 , TMAN20N60A .

History: NDT4N65 | SISA18ADN | SSM9971 | NTTFS008N04C | ISCNH342W | NTP75N03R | SWF4N70D1

Keywords - TMAN12N80AZ MOSFET datasheet

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