All MOSFET. TMAN15N50 Datasheet

 

TMAN15N50 Datasheet and Replacement


   Type Designator: TMAN15N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 245 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 14.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 211 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.44 Ohm
   Package: TO-3PN
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TMAN15N50 Datasheet (PDF)

 ..1. Size:485K  trinnotech
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TMAN15N50

TMAN15N50 N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 14.2A

 9.1. Size:502K  trinnotech
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TMAN15N50

TMAN12N80Z N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 800V 12A

 9.2. Size:512K  trinnotech
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TMAN15N50

TMAN11N90Z N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 900V 11A

 9.3. Size:493K  trinnotech
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TMAN15N50

TMAN10N80 VDSS = 880 V @Tjmax Features ID = 10A Low gate charge RDS(on) = 1.05 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification D G S Device Package Marking Remark TMAN10N80 TO-3P TMAN10N80 RoHS Absolute Maximum Ratings Parameter Symbol TMAN10N80 Unit Drain-Source Voltage VDS 900 V Gate-

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History: CHM85A3PAGP | SQ9407EY-T1 | SFFX054Z | TK7P65W

Keywords - TMAN15N50 MOSFET datasheet

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