TMAN15N50 PDF and Equivalents Search

 

TMAN15N50 Specs and Replacement

Type Designator: TMAN15N50

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 245 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 14.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 211 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.44 Ohm

Package: TO-3PN

TMAN15N50 substitution

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TMAN15N50 datasheet

 ..1. Size:485K  trinnotech
tman15n50.pdf pdf_icon

TMAN15N50

TMAN15N50 N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 14.2A ... See More ⇒

 9.1. Size:502K  trinnotech
tman12n80z.pdf pdf_icon

TMAN15N50

TMAN12N80Z N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 800V 12A ... See More ⇒

 9.2. Size:512K  trinnotech
tman11n90z.pdf pdf_icon

TMAN15N50

TMAN11N90Z N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 900V 11A ... See More ⇒

 9.3. Size:493K  trinnotech
tman10n80.pdf pdf_icon

TMAN15N50

TMAN10N80 VDSS = 880 V @Tjmax Features ID = 10A Low gate charge RDS(on) = 1.05 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification D G S Device Package Marking Remark TMAN10N80 TO-3P TMAN10N80 RoHS Absolute Maximum Ratings Parameter Symbol TMAN10N80 Unit Drain-Source Voltage VDS 900 V Gate-... See More ⇒

Detailed specifications: TK9P65W , TK9Q65W , TMA7N90 , TMAN10N80 , TMAN11N90AZ , TMAN11N90Z , TMAN12N80AZ , TMAN12N80Z , IRFB7545 , TMAN16N60 , TMAN16N60A , TMAN20N50 , TMAN20N50A , TMAN20N60 , TMAN20N60A , TMAN23N50 , TMAN23N50A .

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 


 
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