TMAN16N60 Datasheet and Replacement
Type Designator: TMAN16N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 347 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 61 nS
Cossⓘ - Output Capacitance: 256 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.47 Ohm
Package: TO-3PN
TMAN16N60 substitution
TMAN16N60 Datasheet (PDF)
tman16n60.pdf

TMAN16N60 N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 16A
tman16n60a.pdf

TMAN16N60A N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 16A
tman12n80z.pdf

TMAN12N80Z N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 800V 12A
tman11n90z.pdf

TMAN11N90Z N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 900V 11A
Datasheet: TK9Q65W , TMA7N90 , TMAN10N80 , TMAN11N90AZ , TMAN11N90Z , TMAN12N80AZ , TMAN12N80Z , TMAN15N50 , HY1906P , TMAN16N60A , TMAN20N50 , TMAN20N50A , TMAN20N60 , TMAN20N60A , TMAN23N50 , TMAN23N50A , TMAN7N90 .
History: 2SK3541MGP | STL70N10F3 | SFS12R08PNF | NTHS4101PT1G | FDZ375P | 2SK538
Keywords - TMAN16N60 MOSFET datasheet
TMAN16N60 cross reference
TMAN16N60 equivalent finder
TMAN16N60 lookup
TMAN16N60 substitution
TMAN16N60 replacement
History: 2SK3541MGP | STL70N10F3 | SFS12R08PNF | NTHS4101PT1G | FDZ375P | 2SK538



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