TMAN16N60 Specs and Replacement
Type Designator: TMAN16N60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 347 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 61 nS
Cossⓘ - Output Capacitance: 256 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.47 Ohm
Package: TO-3PN
TMAN16N60 substitution
- MOSFET ⓘ Cross-Reference Search
TMAN16N60 datasheet
tman16n60.pdf
TMAN16N60 N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 16A ... See More ⇒
tman16n60a.pdf
TMAN16N60A N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 16A ... See More ⇒
tman12n80z.pdf
TMAN12N80Z N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 800V 12A ... See More ⇒
tman11n90z.pdf
TMAN11N90Z N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 900V 11A ... See More ⇒
Detailed specifications: TK9Q65W, TMA7N90, TMAN10N80, TMAN11N90AZ, TMAN11N90Z, TMAN12N80AZ, TMAN12N80Z, TMAN15N50, AON7403, TMAN16N60A, TMAN20N50, TMAN20N50A, TMAN20N60, TMAN20N60A, TMAN23N50, TMAN23N50A, TMAN7N90
Keywords - TMAN16N60 MOSFET specs
TMAN16N60 cross reference
TMAN16N60 equivalent finder
TMAN16N60 pdf lookup
TMAN16N60 substitution
TMAN16N60 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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