All MOSFET. TMAN16N60 Datasheet

 

TMAN16N60 Datasheet and Replacement


   Type Designator: TMAN16N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 347 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 61 nS
   Cossⓘ - Output Capacitance: 256 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.47 Ohm
   Package: TO-3PN
 

 TMAN16N60 substitution

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TMAN16N60 Datasheet (PDF)

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TMAN16N60

TMAN16N60 N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 16A

 0.1. Size:457K  trinnotech
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TMAN16N60

TMAN16N60A N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 16A

 9.1. Size:502K  trinnotech
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TMAN16N60

TMAN12N80Z N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 800V 12A

 9.2. Size:512K  trinnotech
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TMAN16N60

TMAN11N90Z N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 900V 11A

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Datasheet: TK9Q65W , TMA7N90 , TMAN10N80 , TMAN11N90AZ , TMAN11N90Z , TMAN12N80AZ , TMAN12N80Z , TMAN15N50 , EMB04N03H , TMAN16N60A , TMAN20N50 , TMAN20N50A , TMAN20N60 , TMAN20N60A , TMAN23N50 , TMAN23N50A , TMAN7N90 .

History: WMQ048NV6LG4 | IRLZ34SPBF

Keywords - TMAN16N60 MOSFET datasheet

 TMAN16N60 cross reference
 TMAN16N60 equivalent finder
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