TMAN16N60
MOSFET. Datasheet pdf. Equivalent
Type Designator: TMAN16N60
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 347
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 16
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 53
nC
trⓘ - Rise Time: 61
nS
Cossⓘ -
Output Capacitance: 256
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.47
Ohm
Package:
TO-3PN
TMAN16N60
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TMAN16N60
Datasheet (PDF)
..1. Size:761K trinnotech
tman16n60.pdf 
TMAN16N60 N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 16A
0.1. Size:457K trinnotech
tman16n60a.pdf
TMAN16N60A N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 16A
9.1. Size:502K trinnotech
tman12n80z.pdf
TMAN12N80Z N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 800V 12A
9.2. Size:512K trinnotech
tman11n90z.pdf
TMAN11N90Z N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 900V 11A
9.3. Size:493K trinnotech
tman10n80.pdf
TMAN10N80 VDSS = 880 V @Tjmax Features ID = 10A Low gate charge RDS(on) = 1.05 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification D G S Device Package Marking Remark TMAN10N80 TO-3P TMAN10N80 RoHS Absolute Maximum Ratings Parameter Symbol TMAN10N80 Unit Drain-Source Voltage VDS 900 V Gate-
9.4. Size:508K trinnotech
tman11n90az.pdf
TMAN11N90AZ N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 900V 11A
9.5. Size:505K trinnotech
tman12n80az.pdf
TMAN12N80AZ N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 800V 12A
9.6. Size:485K trinnotech
tman15n50.pdf
TMAN15N50 N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 14.2A
Datasheet: WPB4002
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