All MOSFET. TMAN16N60A Datasheet

 

TMAN16N60A Datasheet and Replacement


   Type Designator: TMAN16N60A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 290 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 262 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.47 Ohm
   Package: TO-3PN
 

 TMAN16N60A substitution

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TMAN16N60A Datasheet (PDF)

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TMAN16N60A

TMAN16N60A N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 16A

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TMAN16N60A

TMAN16N60 N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 16A

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TMAN16N60A

TMAN12N80Z N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 800V 12A

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TMAN16N60A

TMAN11N90Z N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 900V 11A

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Datasheet: TMA7N90 , TMAN10N80 , TMAN11N90AZ , TMAN11N90Z , TMAN12N80AZ , TMAN12N80Z , TMAN15N50 , TMAN16N60 , IRF9640 , TMAN20N50 , TMAN20N50A , TMAN20N60 , TMAN20N60A , TMAN23N50 , TMAN23N50A , TMAN7N90 , TMAN8N80 .

History: SIZ704DT | NCEP072N10A

Keywords - TMAN16N60A MOSFET datasheet

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