TMAN20N60A Datasheet and Replacement
Type Designator: TMAN20N60A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 347 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 70 nC
tr ⓘ - Rise Time: 87 nS
Cossⓘ - Output Capacitance: 346 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.33 Ohm
Package: TO-3PN
TMAN20N60A substitution
TMAN20N60A Datasheet (PDF)
..1. Size:505K trinnotech
tman20n60a.pdf
tman20n60a.pdf
TMAN20N60A N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 20A
5.1. Size:694K trinnotech
tman20n60.pdf
tman20n60.pdf
TMAN20N60 N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 20A
7.1. Size:484K trinnotech
tman20n50.pdf
tman20n50.pdf
TMAN20N50 N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 20A
7.2. Size:503K trinnotech
tman20n50a.pdf
tman20n50a.pdf
TMAN20N50A N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 100% avalanche tested 500V 20A
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