TMAN20N60A PDF and Equivalents Search

 

TMAN20N60A Specs and Replacement

Type Designator: TMAN20N60A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 347 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 87 nS

Cossⓘ - Output Capacitance: 346 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.33 Ohm

Package: TO-3PN

TMAN20N60A substitution

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TMAN20N60A datasheet

 ..1. Size:505K  trinnotech
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TMAN20N60A

TMAN20N60A N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 20A ... See More ⇒

 5.1. Size:694K  trinnotech
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TMAN20N60A

TMAN20N60 N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 20A ... See More ⇒

 7.1. Size:484K  trinnotech
 tman20n50.pdf pdf_icon

TMAN20N60A

TMAN20N50 N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 20A ... See More ⇒

 7.2. Size:503K  trinnotech
 tman20n50a.pdf pdf_icon

TMAN20N60A

TMAN20N50A N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 100% avalanche tested 500V 20A ... See More ⇒

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Detailed specifications: TMAN12N80AZ, TMAN12N80Z, TMAN15N50, TMAN16N60, TMAN16N60A, TMAN20N50, TMAN20N50A, TMAN20N60, AOD4184A, TMAN23N50, TMAN23N50A, TMAN7N90, TMAN8N80, TMAN9N90, TMAN9N90AZ, TMD16N25Z, TMD18N20Z

Keywords - TMAN20N60A MOSFET specs

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