All MOSFET. TMAN23N50 Datasheet

 

TMAN23N50 Datasheet and Replacement


   Type Designator: TMAN23N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 347 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 23 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 66 nC
   tr ⓘ - Rise Time: 64 nS
   Cossⓘ - Output Capacitance: 357 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm
   Package: TO-3PN
 

 TMAN23N50 substitution

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TMAN23N50 Datasheet (PDF)

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TMAN23N50

TMAN23N50 N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 500V 23A

 0.1. Size:494K  trinnotech
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TMAN23N50

TMAN23N50A N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 23A

 9.1. Size:484K  trinnotech
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TMAN23N50

TMAN20N50 N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 20A

 9.2. Size:503K  trinnotech
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TMAN23N50

TMAN20N50A N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 100% avalanche tested 500V 20A

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Datasheet: TMAN12N80Z , TMAN15N50 , TMAN16N60 , TMAN16N60A , TMAN20N50 , TMAN20N50A , TMAN20N60 , TMAN20N60A , AO3407 , TMAN23N50A , TMAN7N90 , TMAN8N80 , TMAN9N90 , TMAN9N90AZ , TMD16N25Z , TMD18N20Z , TMD2N40 .

History: IPP037N08N3 | NCEP045N10F

Keywords - TMAN23N50 MOSFET datasheet

 TMAN23N50 cross reference
 TMAN23N50 equivalent finder
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