All MOSFET. TMAN23N50 Datasheet

 

TMAN23N50 Datasheet and Replacement


   Type Designator: TMAN23N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 347 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 23 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 64 nS
   Cossⓘ - Output Capacitance: 357 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm
   Package: TO-3PN
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TMAN23N50 Datasheet (PDF)

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TMAN23N50

TMAN23N50 N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 500V 23A

 0.1. Size:494K  trinnotech
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TMAN23N50

TMAN23N50A N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 23A

 9.1. Size:484K  trinnotech
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TMAN23N50

TMAN20N50 N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 20A

 9.2. Size:503K  trinnotech
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TMAN23N50

TMAN20N50A N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 100% avalanche tested 500V 20A

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History: GKI04031 | HLML6401 | MPSA80M670B | SWF830D1 | STH12N120K5-2 | FIR4N65FG | AP85T03GH-HF

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