TMAN23N50 Datasheet and Replacement
Type Designator: TMAN23N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 347 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 23 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 64 nS
Cossⓘ - Output Capacitance: 357 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm
Package: TO-3PN
TMAN23N50 substitution
TMAN23N50 Datasheet (PDF)
tman23n50.pdf

TMAN23N50 N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 500V 23A
tman23n50a.pdf

TMAN23N50A N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 23A
tman20n50.pdf

TMAN20N50 N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 20A
tman20n50a.pdf

TMAN20N50A N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 100% avalanche tested 500V 20A
Datasheet: TMAN12N80Z , TMAN15N50 , TMAN16N60 , TMAN16N60A , TMAN20N50 , TMAN20N50A , TMAN20N60 , TMAN20N60A , BS170 , TMAN23N50A , TMAN7N90 , TMAN8N80 , TMAN9N90 , TMAN9N90AZ , TMD16N25Z , TMD18N20Z , TMD2N40 .
History: 2SK1512-01 | SSF1122D | SFS06R10PF | 2SK1527 | SM6106PSK | STP20N60M2-EP | MMD60R360QRH
Keywords - TMAN23N50 MOSFET datasheet
TMAN23N50 cross reference
TMAN23N50 equivalent finder
TMAN23N50 lookup
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History: 2SK1512-01 | SSF1122D | SFS06R10PF | 2SK1527 | SM6106PSK | STP20N60M2-EP | MMD60R360QRH



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