TMAN7N90 Specs and Replacement
Type Designator: TMAN7N90
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 266 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 38 nS
Cossⓘ - Output Capacitance: 133 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm
Package: TO-3PN
TMAN7N90 substitution
- MOSFET ⓘ Cross-Reference Search
TMAN7N90 datasheet
tma7n90 tman7n90.pdf
TMA7N90/TMAN7N90 VDSS = 990 V @Tjmax Features ID = 7.2A Low gate charge RDS(on) = 1.9 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification D TO-3P/TO3PN G S Device Package Marking Remark TMA7N90/TMAN7N90 TO-3P TMA7N90/TMAN7N90 RoHS Absolute Maximum Ratings Parameter Symbol TMA7N90/TMAN7N90 Uni... See More ⇒
Detailed specifications: TMAN16N60, TMAN16N60A, TMAN20N50, TMAN20N50A, TMAN20N60, TMAN20N60A, TMAN23N50, TMAN23N50A, IRFP064N, TMAN8N80, TMAN9N90, TMAN9N90AZ, TMD16N25Z, TMD18N20Z, TMD2N40, TMD2N60AZ, TMD2N60Z
Keywords - TMAN7N90 MOSFET specs
TMAN7N90 cross reference
TMAN7N90 equivalent finder
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TMAN7N90 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: TMAN23N50A | SIR802DP-T1-GE3
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