All MOSFET. TMAN7N90 Datasheet

 

TMAN7N90 Datasheet and Replacement


   Type Designator: TMAN7N90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 266 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 7.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 49 nC
   tr ⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 133 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm
   Package: TO-3PN
 

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TMAN7N90 Datasheet (PDF)

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TMAN7N90

TMA7N90/TMAN7N90 VDSS = 990 V @Tjmax Features ID = 7.2A Low gate charge RDS(on) = 1.9 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification D TO-3P/TO3PN G S Device Package Marking Remark TMA7N90/TMAN7N90 TO-3P TMA7N90/TMAN7N90 RoHS Absolute Maximum Ratings Parameter Symbol TMA7N90/TMAN7N90 Uni

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History: AUIRL1404ZSTRL | CPH6445

Keywords - TMAN7N90 MOSFET datasheet

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