TMAN7N90 Datasheet and Replacement
Type Designator: TMAN7N90
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 266 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 38 nS
Cossⓘ - Output Capacitance: 133 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm
Package: TO-3PN
TMAN7N90 substitution
TMAN7N90 Datasheet (PDF)
tma7n90 tman7n90.pdf

TMA7N90/TMAN7N90 VDSS = 990 V @Tjmax Features ID = 7.2A Low gate charge RDS(on) = 1.9 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification D TO-3P/TO3PN G S Device Package Marking Remark TMA7N90/TMAN7N90 TO-3P TMA7N90/TMAN7N90 RoHS Absolute Maximum Ratings Parameter Symbol TMA7N90/TMAN7N90 Uni
Datasheet: TMAN16N60 , TMAN16N60A , TMAN20N50 , TMAN20N50A , TMAN20N60 , TMAN20N60A , TMAN23N50 , TMAN23N50A , 5N50 , TMAN8N80 , TMAN9N90 , TMAN9N90AZ , TMD16N25Z , TMD18N20Z , TMD2N40 , TMD2N60AZ , TMD2N60Z .
History: LP2501DT1G | RU40E25L | BUK452-60A | STD2NK70Z-1 | 2SK1038 | IRFU9024NPBF | PNM523T30V01
Keywords - TMAN7N90 MOSFET datasheet
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History: LP2501DT1G | RU40E25L | BUK452-60A | STD2NK70Z-1 | 2SK1038 | IRFU9024NPBF | PNM523T30V01



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