TMAN8N80 Specs and Replacement
Type Designator: TMAN8N80
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 265 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 146 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO-3PN
TMAN8N80 substitution
- MOSFET ⓘ Cross-Reference Search
TMAN8N80 datasheet
tman8n80.pdf
TMAN8N80 N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 800V 8A ... See More ⇒
Detailed specifications: TMAN16N60A, TMAN20N50, TMAN20N50A, TMAN20N60, TMAN20N60A, TMAN23N50, TMAN23N50A, TMAN7N90, AO4468, TMAN9N90, TMAN9N90AZ, TMD16N25Z, TMD18N20Z, TMD2N40, TMD2N60AZ, TMD2N60Z, TMD2N65AZ
Keywords - TMAN8N80 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: SIR802DP-T1-GE3
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