TMD2N40 PDF and Equivalents Search

 

TMD2N40 Specs and Replacement

Type Designator: TMD2N40

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 32 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.4 Ohm

Package: DPAK

TMD2N40 substitution

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TMD2N40 datasheet

 ..1. Size:338K  trinnotech
 tmd2n40 tmu2n40.pdf pdf_icon

TMD2N40

TMD2N40/TMU2N40 TMD2N40G/TMU2N40G VDSS = 440 V @Tjmax Features ID = 2A Low gate charge RDS(on) = 3.4 W(max) @ VGS= 10 V 100% avalanche tested RDS(on) = 2.75 W(typ) @ VGS= 10 V Improved dv/dt capability RDS(on) = 2.80 W(typ) @ VGS= 7.5 V RoHS compliant Halogen free package JEDEC Qualification D-PAK D I-PAK G S Device Package Marking Remark TMD2N40 / ... See More ⇒

 9.1. Size:474K  trinnotech
 tmd2n60z tmu2n60z.pdf pdf_icon

TMD2N40

TMD2N60Z(G)/TMU2N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 2A ... See More ⇒

 9.2. Size:455K  trinnotech
 tmd2n60az tmu2n60az.pdf pdf_icon

TMD2N40

TMD2N60AZ(G)/TMU2N60AZ(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 2.0A ... See More ⇒

 9.3. Size:449K  trinnotech
 tmd2n65az tmu2n65az.pdf pdf_icon

TMD2N40

TMD2N65AZ(G)/TMU2N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 1.8A ... See More ⇒

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Detailed specifications: TMAN23N50, TMAN23N50A, TMAN7N90, TMAN8N80, TMAN9N90, TMAN9N90AZ, TMD16N25Z, TMD18N20Z, IRF840, TMD2N60AZ, TMD2N60Z, TMD2N65AZ, TMD3N40ZG, TMD3N50AZ, TMD3N50Z, TMD3N80G, TMD3N90

Keywords - TMD2N40 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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