All MOSFET. TMD2N40 Datasheet

 

TMD2N40 Datasheet and Replacement


   Type Designator: TMD2N40
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 4.9 nC
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 32 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.4 Ohm
   Package: DPAK
 

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TMD2N40 Datasheet (PDF)

 ..1. Size:338K  trinnotech
 tmd2n40 tmu2n40.pdf pdf_icon

TMD2N40

TMD2N40/TMU2N40TMD2N40G/TMU2N40GVDSS = 440 V @TjmaxFeaturesID = 2A Low gate chargeRDS(on) = 3.4 W(max) @ VGS= 10 V 100% avalanche testedRDS(on) = 2.75 W(typ) @ VGS= 10 V Improved dv/dt capability RDS(on) = 2.80 W(typ) @ VGS= 7.5 V RoHS compliant Halogen free package JEDEC QualificationD-PAKDI-PAKGSDevice Package Marking RemarkTMD2N40 /

 9.1. Size:474K  trinnotech
 tmd2n60z tmu2n60z.pdf pdf_icon

TMD2N40

TMD2N60Z(G)/TMU2N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 2A

 9.2. Size:455K  trinnotech
 tmd2n60az tmu2n60az.pdf pdf_icon

TMD2N40

TMD2N60AZ(G)/TMU2N60AZ(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 2.0A

 9.3. Size:449K  trinnotech
 tmd2n65az tmu2n65az.pdf pdf_icon

TMD2N40

TMD2N65AZ(G)/TMU2N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 1.8A

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Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: WML25N65EM | IRFP460C | MSQ99N26

Keywords - TMD2N40 MOSFET datasheet

 TMD2N40 cross reference
 TMD2N40 equivalent finder
 TMD2N40 lookup
 TMD2N40 substitution
 TMD2N40 replacement

 

 
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