All MOSFET. TMD2N65AZ Datasheet

 

TMD2N65AZ MOSFET. Datasheet pdf. Equivalent


   Type Designator: TMD2N65AZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 1.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.5 nC
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.6 Ohm
   Package: DPAK

 TMD2N65AZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TMD2N65AZ Datasheet (PDF)

 ..1. Size:449K  trinnotech
 tmd2n65az tmu2n65az.pdf

TMD2N65AZ TMD2N65AZ

TMD2N65AZ(G)/TMU2N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 1.8A

 8.1. Size:474K  trinnotech
 tmd2n60z tmu2n60z.pdf

TMD2N65AZ TMD2N65AZ

TMD2N60Z(G)/TMU2N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 2A

 8.2. Size:455K  trinnotech
 tmd2n60az tmu2n60az.pdf

TMD2N65AZ TMD2N65AZ

TMD2N60AZ(G)/TMU2N60AZ(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 2.0A

 8.3. Size:640K  cn wuxi unigroup
 tma2n60h tmd2n60h tmt2n60h tmu2n60h.pdf

TMD2N65AZ TMD2N65AZ

TMA2N60H,TMD2N60H,TMT2N60H,TMU2N60H Wuxi Unigroup Microelectronics CompanyWuxi Unigroup Microelectronics Company 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Info

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: FS10KM-9

 

 
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