TMD2N65AZ MOSFET Datasheet: N-Ch, 650V, 1.8A. Full specification with pinout and replacement list

TMD2N65AZ Specs and Replacement

Type Designator: TMD2N65AZ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 52 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.6 Ohm

Package: DPAK

TMD2N65AZ substitution

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TMD2N65AZ datasheet

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TMD2N65AZ(G)/TMU2N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 1.8A ... See More ⇒

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TMD2N60Z(G)/TMU2N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 2A ... See More ⇒

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TMD2N60AZ(G)/TMU2N60AZ(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 2.0A ... See More ⇒

8.3. Size:640K cn wuxi unigroup
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TMA2N60H,TMD2N60H,TMT2N60H,TMU2N60H Wuxi Unigroup Microelectronics Company Wuxi Unigroup Microelectronics Company 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Info... See More ⇒

Detailed specifications: TMAN8N80, TMAN9N90, TMAN9N90AZ, TMD16N25Z, TMD18N20Z, TMD2N40, TMD2N60AZ, TMD2N60Z, IRF540, TMD3N40ZG, TMD3N50AZ, TMD3N50Z, TMD3N80G, TMD3N90, TMD4N60, TMD4N60AZ, TMD4N65AZ