All MOSFET. TMD7N65AZ Datasheet

 

TMD7N65AZ Datasheet and Replacement


   Type Designator: TMD7N65AZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 103 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: DPAK
 

 TMD7N65AZ substitution

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TMD7N65AZ Datasheet (PDF)

 ..1. Size:461K  trinnotech
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TMD7N65AZ

TMD7N65AZ(G)/TMU7N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 6.5A

 7.1. Size:463K  trinnotech
 tmd7n65z tmu7n65z.pdf pdf_icon

TMD7N65AZ

TMD7N65Z(G)/TMU7N65Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 650V 6.5A

 7.2. Size:1062K  cn wuxi unigroup
 tma7n65h tmp7n65h tmd7n65h tmu7n65h.pdf pdf_icon

TMD7N65AZ

TMA7N65H, TMP7N65H, TMD7N65H, TMU7N65H Wuxi Unigroup Microelectronics Company650V N-Channel MOSFETFEATURESl Fast switchingl 100% avalanche testedl Improved dv/dt capabilityAPPLICATIONSl Switch Mode Power Supply (SMPS)l Uninterruptible Power Supply (UPS)l Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingTMA7N65H TO-220F A7N65HTM

 8.1. Size:457K  trinnotech
 tmd7n60z tmu7n60z.pdf pdf_icon

TMD7N65AZ

TMD7N60Z(G)/TMU7N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 7A

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Datasheet: TMD5N50G , TMD5N60AZ , TMD5N60Z , AOD434 , TMD630Z , TMD6N65G , TMD6N70 , TMD7N60Z , AON7408 , TMD7N65Z , TMD830 , TMD830AZ , TMD830Z , TMD8N25Z , TMD8N50Z , TMD8N60AZ , TMP10N60 .

History: WMJ18N50D1B | AOT8N60

Keywords - TMD7N65AZ MOSFET datasheet

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