TMD7N65AZ MOSFET. Datasheet pdf. Equivalent
Type Designator: TMD7N65AZ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 120 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 6.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 22 nC
Rise Time (tr): 46 nS
Drain-Source Capacitance (Cd): 103 pF
Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm
Package: DPAK
TMD7N65AZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TMD7N65AZ Datasheet (PDF)
1.1. tmd7n65az tmu7n65az.pdf 
Size:461K _update
TMD7N65AZ(G)/TMU7N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 6.5A <1.4W Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance D-PAK I-PAK Device Package Marking Remark TMD7N65AZ / TMU7N65AZ D-PAK/I-PAK TMD7N65AZ / TMU7N65AZ RoHS TMD7N6
3.1. tmd7n65z tmu7n65z.pdf Size:463K _update
TMD7N65Z(G)/TMU7N65Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 650V 6.5A <1.4W 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D-PAK I-PAK Device Package Marking Remark TMD7N65Z / TMU7N65Z D-PAK/I-PAK TMD7N65Z / TMU7N65Z RoHS TMD7N65ZG / TMU7N65ZG D-PAK/I-PAK TMD7
4.1. tmd7n60z tmu7n60z.pdf Size:457K _update
TMD7N60Z(G)/TMU7N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 7A <1.2W 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D-PAK I-PAK Device Package Marking Remark TMD7N60Z / TMU7N60Z D-PAK/I-PAK TMD7N60Z / TMU7N60Z RoHS TMD7N60ZG / TMU7N60ZG D-PAK/I-PAK TMD7N6
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