TMD7N65Z Datasheet. Specs and Replacement

Type Designator: TMD7N65Z  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: DPAK

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TMD7N65Z datasheet

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TMD7N65Z

TMD7N65Z(G)/TMU7N65Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 650V 6.5A ... See More ⇒

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TMD7N65Z

TMD7N65AZ(G)/TMU7N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 6.5A ... See More ⇒

 7.2. Size:1062K  cn wuxi unigroup
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TMD7N65Z

TMA7N65H, TMP7N65H, TMD7N65H, TMU7N65H Wuxi Unigroup Microelectronics Company 650V N-Channel MOSFET FEATURES l Fast switching l 100% avalanche tested l Improved dv/dt capability APPLICATIONS l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply (UPS) l Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA7N65H TO-220F A7N65H TM... See More ⇒

 8.1. Size:457K  trinnotech
 tmd7n60z tmu7n60z.pdf pdf_icon

TMD7N65Z

TMD7N60Z(G)/TMU7N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 7A ... See More ⇒

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Detailed specifications: TMD5N60AZ, TMD5N60Z, AOD434, TMD630Z, TMD6N65G, TMD6N70, TMD7N60Z, TMD7N65AZ, IRFP250N, TMD830, TMD830AZ, TMD830Z, TMD8N25Z, TMD8N50Z, TMD8N60AZ, TMP10N60, TMP10N60A

Keywords - TMD7N65Z MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.