TMD7N65Z Datasheet and Replacement
Type Designator: TMD7N65Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 6.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 27 nC
tr ⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: DPAK
TMD7N65Z substitution
TMD7N65Z Datasheet (PDF)
tmd7n65z tmu7n65z.pdf

TMD7N65Z(G)/TMU7N65Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 650V 6.5A
tmd7n65az tmu7n65az.pdf

TMD7N65AZ(G)/TMU7N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 6.5A
tma7n65h tmp7n65h tmd7n65h tmu7n65h.pdf

TMA7N65H, TMP7N65H, TMD7N65H, TMU7N65H Wuxi Unigroup Microelectronics Company650V N-Channel MOSFETFEATURESl Fast switchingl 100% avalanche testedl Improved dv/dt capabilityAPPLICATIONSl Switch Mode Power Supply (SMPS)l Uninterruptible Power Supply (UPS)l Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingTMA7N65H TO-220F A7N65HTM
tmd7n60z tmu7n60z.pdf

TMD7N60Z(G)/TMU7N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 7A
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , 7N65 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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