All MOSFET. TMD830 Datasheet

 

TMD830 Datasheet and Replacement


   Type Designator: TMD830
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 98.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: DPAK
 

 TMD830 substitution

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TMD830 Datasheet (PDF)

 ..1. Size:468K  trinnotech
 tmd830 tmu830.pdf pdf_icon

TMD830

TMD830(G)/TMU830(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 100% avalanche tested 500V 4.5A

 0.1. Size:451K  trinnotech
 tmd830az tmu830az.pdf pdf_icon

TMD830

TMD830AZ(G)/TMU830AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 4.5A

 0.2. Size:465K  trinnotech
 tmd830z tmu830z.pdf pdf_icon

TMD830

TMD830Z(G)/TMU830Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 4.5A

Datasheet: TMD5N60Z , AOD434 , TMD630Z , TMD6N65G , TMD6N70 , TMD7N60Z , TMD7N65AZ , TMD7N65Z , AO3400 , TMD830AZ , TMD830Z , TMD8N25Z , TMD8N50Z , TMD8N60AZ , TMP10N60 , TMP10N60A , TMP10N65 .

History: IRFP4227

Keywords - TMD830 MOSFET datasheet

 TMD830 cross reference
 TMD830 equivalent finder
 TMD830 lookup
 TMD830 substitution
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