TMD830 PDF Specs and Replacement
Type Designator: TMD830
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 98.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 80 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: DPAK
TMD830 substitution
TMD830 PDF Specs
tmd830 tmu830.pdf
TMD830(G)/TMU830(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 100% avalanche tested 500V 4.5A ... See More ⇒
tmd830az tmu830az.pdf
TMD830AZ(G)/TMU830AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 4.5A ... See More ⇒
tmd830z tmu830z.pdf
TMD830Z(G)/TMU830Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 4.5A ... See More ⇒
Detailed specifications: TMD5N60Z , AOD434 , TMD630Z , TMD6N65G , TMD6N70 , TMD7N60Z , TMD7N65AZ , TMD7N65Z , IRF9540 , TMD830AZ , TMD830Z , TMD8N25Z , TMD8N50Z , TMD8N60AZ , TMP10N60 , TMP10N60A , TMP10N65 .
History: DHS020N88U | DHS021N04E
Keywords - TMD830 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: DHS020N88U | DHS021N04E
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MOSFET: AP50N04Q | AP50N04K | AP50N04GD
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