TMD830AZ Datasheet and Replacement
Type Designator: TMD830AZ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 98.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 78 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: DPAK
TMD830AZ substitution
TMD830AZ Datasheet (PDF)
tmd830az tmu830az.pdf

TMD830AZ(G)/TMU830AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 4.5A
tmd830 tmu830.pdf

TMD830(G)/TMU830(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 100% avalanche tested 500V 4.5A
tmd830z tmu830z.pdf

TMD830Z(G)/TMU830Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 4.5A
Datasheet: AOD434 , TMD630Z , TMD6N65G , TMD6N70 , TMD7N60Z , TMD7N65AZ , TMD7N65Z , TMD830 , IRLZ44N , TMD830Z , TMD8N25Z , TMD8N50Z , TMD8N60AZ , TMP10N60 , TMP10N60A , TMP10N65 , TMP10N65A .
History: K3569
Keywords - TMD830AZ MOSFET datasheet
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History: K3569



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