TMD830AZ MOSFET. Datasheet pdf. Equivalent
Type Designator: TMD830AZ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 98.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 4.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 15 nC
trⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 78 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: DPAK
TMD830AZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TMD830AZ Datasheet (PDF)
tmd830az tmu830az.pdf
TMD830AZ(G)/TMU830AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 4.5A
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TMD830(G)/TMU830(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 100% avalanche tested 500V 4.5A
tmd830z tmu830z.pdf
TMD830Z(G)/TMU830Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 4.5A
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: NCE30P25BQ | SSF7N80A | FHD5N65B | NCE40H12A | SSA50R240S | HSU60N02 | RJK0631JPD
History: NCE30P25BQ | SSF7N80A | FHD5N65B | NCE40H12A | SSA50R240S | HSU60N02 | RJK0631JPD
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