All MOSFET. TMP11N50SG Datasheet

 

TMP11N50SG Datasheet and Replacement


   Type Designator: TMP11N50SG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 158 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 28 nC
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 374 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
   Package: TO-220
 

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TMP11N50SG Datasheet (PDF)

 ..1. Size:340K  trinnotech
 tmp11n50sg tmpf11n50sg.pdf pdf_icon

TMP11N50SG

TMP11N50SG/TMPF11N50SGVDSS = 550 V @TjmaxFeaturesID = 10A Low gate chargeRDS(ON) = 0.7 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery DGSDevice Package Marking RemarkTMP11N50SG / TMPF11N50SG TO-220 / TO-220F TMP11N50SG / TMPF11N50SG Halogen Fre

 6.1. Size:353K  trinnotech
 tmp11n50 tmpf11n50.pdf pdf_icon

TMP11N50SG

TMP11N50/TMPF11N50TMP11N50G/TMPF11N50GVDSS = 550 V @TjmaxFeaturesID = 11A Low gate chargeRDS(ON) = 0.67 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery DGSDevice Package Marking RemarkTMP11N50 / TMPF11N50 TO-220 / TO-220F TMP11N50 / TMPF11N50

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History: TK12P60W

Keywords - TMP11N50SG MOSFET datasheet

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