TMP13N50 Datasheet. Specs and Replacement
Type Designator: TMP13N50 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 183 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 187 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
Package: TO-220
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TMP13N50 datasheet
tmp13n50 tmpf13n50.pdf
TMP13N50/TMPF13N50 TMP13N50G/TMPF13N50G VDSS = 550 V @Tjmax Features ID = 13A Low gate charge RDS(on) = 0.48 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP13N50 / TMPF13N50 TO-220 / TO-220F TMP13N50 / TMPF13N50 RoHS TMP13N50G / TMPF13N50G... See More ⇒
Detailed specifications: TMP10N60A, TMP10N65, TMP10N65A, TMP10N80, TMP11N50, TMP11N50SG, TMP12N60, TMP12N60A, 13N50, TMP15N50, TMP16N25Z, TMP16N60, TMP16N60A, TMP18N20Z, TMP20N50, TMP20N50A, TMP2N60AZ
Keywords - TMP13N50 MOSFET specs
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