TMP13N50 Datasheet and Replacement
Type Designator: TMP13N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 183 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 36 nC
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 187 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
Package: TO-220
TMP13N50 substitution
TMP13N50 Datasheet (PDF)
tmp13n50 tmpf13n50.pdf

TMP13N50/TMPF13N50TMP13N50G/TMPF13N50GVDSS = 550 V @TjmaxFeaturesID = 13A Low gate chargeRDS(on) = 0.48 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationDGSDevice Package Marking RemarkTMP13N50 / TMPF13N50 TO-220 / TO-220F TMP13N50 / TMPF13N50 RoHSTMP13N50G / TMPF13N50G
Datasheet: TMP10N60A , TMP10N65 , TMP10N65A , TMP10N80 , TMP11N50 , TMP11N50SG , TMP12N60 , TMP12N60A , AON7506 , TMP15N50 , TMP16N25Z , TMP16N60 , TMP16N60A , TMP18N20Z , TMP20N50 , TMP20N50A , TMP2N60AZ .
Keywords - TMP13N50 MOSFET datasheet
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History: TMP16N60 | LNC16N60



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