All MOSFET. TMP4N65 Datasheet

 

TMP4N65 Datasheet and Replacement


   Type Designator: TMP4N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 98.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 67 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
   Package: TO-220
 

 TMP4N65 substitution

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TMP4N65 Datasheet (PDF)

 ..1. Size:624K  trinnotech
tmp4n65 tmpf4n65.pdf pdf_icon

TMP4N65

TMP4N65(G)/TMPF4N65(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 4A

 0.1. Size:608K  trinnotech
tmp4n65az tmpf4n65az.pdf pdf_icon

TMP4N65

TMP4N65AZ(G)/TMPF4N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 4.0A

 0.2. Size:628K  trinnotech
tmp4n65z tmpf4n65z.pdf pdf_icon

TMP4N65

TMP4N65Z(G)/TMPF4N65Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 4A

 8.1. Size:571K  trinnotech
tmp4n60 tmpf4n60.pdf pdf_icon

TMP4N65

TMP4N60/TMPF4N60 TMP4N60G/TMPF4N60G VDSS = 660 V @Tjmax Features ID = 4A Low gate charge RDS(on) = 2.55 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP4N60 / TMPF4N60 TO-220 / TO-220F TMP4N60 / TMPF4N60 RoHS TMP4N60G / TMPF4

Datasheet: TMP2N60Z , TMP2N65AZ , TMP3N50AZ , TMP3N50Z , TMP3N80 , TMP3N90 , TMP4N60 , TMP4N60AZ , STF13NM60N , TMP4N65AZ , TMP4N65Z , TMP4N80 , TMP4N90 , TMP5N50 , TMP5N50SG , TMP5N60AZ , TMP5N60Z .

History: AP05N20GH | WMK13N50D1B | IRF7413Q | TMP4N80

Keywords - TMP4N65 MOSFET datasheet

 TMP4N65 cross reference
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