TMP630Z Specs and Replacement
Type Designator: TMP630Z
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 52 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 86 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO-220
TMP630Z substitution
- MOSFET ⓘ Cross-Reference Search
TMP630Z datasheet
tmp630z tmpf630z.pdf
TMP630Z(G)/TMPF630Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on)MAX 100% avalanche tested 200V 9A ... See More ⇒
Detailed specifications: TMP4N65AZ, TMP4N65Z, TMP4N80, TMP4N90, TMP5N50, TMP5N50SG, TMP5N60AZ, TMP5N60Z, 20N50, TMP6N65, TMP6N70, TMP7N60Z, TMP7N65AZ, TMP7N65Z, TMP7N90, TMP830, TMP830AZ
Keywords - TMP630Z MOSFET specs
TMP630Z cross reference
TMP630Z equivalent finder
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TMP630Z substitution
TMP630Z replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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