All MOSFET. TMP7N90 Datasheet

 

TMP7N90 Datasheet and Replacement


   Type Designator: TMP7N90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 49 nC
   tr ⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 133 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm
   Package: TO-220
 
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TMP7N90 Datasheet (PDF)

 ..1. Size:440K  trinnotech
 tmp7n90 tmpf7n90.pdf pdf_icon

TMP7N90

TMP7N90/TMPF7N90G VDSS = 990 V @Tjmax Features ID = 7A Low gate charge RDS(ON) = 1.9 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP7N90 TO-220 TMP7N90 RoHS TMPF7N90G TO-220F TMPF7N90G Halogen Free Absolute Maximum Ratings

 9.1. Size:615K  trinnotech
 tmp7n65az tmpf7n65az.pdf pdf_icon

TMP7N90

TMP7N65AZ(G)/TMPF7N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 6.5A

 9.2. Size:616K  trinnotech
 tmp7n65z tmpf7n65z.pdf pdf_icon

TMP7N90

TMP7N65Z(G)/TMPF7N65Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 6.5A

 9.3. Size:611K  trinnotech
 tmp7n60z tmpf7n60z.pdf pdf_icon

TMP7N90

TMP7N60Z(G)/TMPF7N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 7A

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Datasheet: TMP5N60AZ , TMP5N60Z , TMP630Z , TMP6N65 , TMP6N70 , TMP7N60Z , TMP7N65AZ , TMP7N65Z , K2611 , TMP830 , TMP830AZ , TMP830Z , TMP8N25Z , TMP8N50Z , TMP8N60AZ , TMP8N80 , TMP9N50 .

Keywords - TMP7N90 MOSFET datasheet

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