All MOSFET. TMPF10N60 Datasheet

 

TMPF10N60 Datasheet and Replacement


   Type Designator: TMPF10N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 36 nC
   tr ⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: TO-220F
 

 TMPF10N60 substitution

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TMPF10N60 Datasheet (PDF)

 ..1. Size:335K  trinnotech
 tmp10n60 tmpf10n60.pdf pdf_icon

TMPF10N60

TMP10N60/TMPF10N60TMP10N60G/TMPF10N60GVDSS = 660 V @TjmaxFeaturesID = 10A Low gate chargeRDS(on) = 0.75 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationDGSDevice Package Marking RemarkTMP10N60 / TMPF10N60 TO-220 / TO-220F TMP10N60 / TMPF10N60 RoHSTMP10N60G / TMPF10N60G

 0.1. Size:609K  trinnotech
 tmp10n60a tmpf10n60a.pdf pdf_icon

TMPF10N60

TMP10N60A(G)/TMPF10N60A(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 10A

 6.1. Size:577K  trinnotech
 tmp10n65 tmpf10n65.pdf pdf_icon

TMPF10N60

TMP10N65/TMPF10N65 TMP10N65G/TMPF10N65G VDSS = 715 V @Tjmax Features ID = 9.5A Low gate charge RDS(on) = 0.98 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP10N65 / TMPF10N65 TO-220 / TO-220F TMP10N65 / TMPF10N65 RoHS TMP10N

 6.2. Size:607K  trinnotech
 tmp10n65a tmpf10n65a.pdf pdf_icon

TMPF10N60

TMP10N65A(G)/TMPF10N65A(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 9.5A

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Keywords - TMPF10N60 MOSFET datasheet

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