All MOSFET. TMPF2N65AZ Datasheet

 

TMPF2N65AZ Datasheet and Replacement


   Type Designator: TMPF2N65AZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 17.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 1.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.6 Ohm
   Package: TO-220F
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TMPF2N65AZ Datasheet (PDF)

 ..1. Size:604K  trinnotech
 tmp2n65az tmpf2n65az.pdf pdf_icon

TMPF2N65AZ

TMP2N65AZ(G)/TMPF2N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 1.8A

 7.1. Size:627K  trinnotech
 tmp2n60z tmpf2n60z.pdf pdf_icon

TMPF2N65AZ

TMP2N60Z(G)/TMPF2N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 2A

 7.2. Size:609K  trinnotech
 tmp2n60az tmpf2n60az.pdf pdf_icon

TMPF2N65AZ

TMP2N60AZ(G)/TMPF2N60AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 2.0A

 9.1. Size:409K  trinnotech
 tmp20n50 tmpf20n50.pdf pdf_icon

TMPF2N65AZ

TMP20N50/TMPF20N50 TMP20N50G/TMPF20N50G VDSS = 550 V @Tjmax Features ID = 18A Low gate charge RDS(on) = 0.3 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP20N50 / TMPF20N50 TO-220 / TO-220F TMP20N50 / TMPF20N50 RoHS TMP20N50

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Keywords - TMPF2N65AZ MOSFET datasheet

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