All MOSFET. TMPF4N90 Datasheet

 

TMPF4N90 MOSFET. Datasheet pdf. Equivalent


   Type Designator: TMPF4N90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 38.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 25 nC
   trⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
   Package: TO-220F

 TMPF4N90 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TMPF4N90 Datasheet (PDF)

 ..1. Size:333K  trinnotech
tmp4n90 tmpf4n90.pdf

TMPF4N90
TMPF4N90

TMP4N90/TMPF4N90TMP4N90G/TMPF4N90GVDSS = 990 V @TjmaxFeaturesID = 4A Low gate chargeRDS(ON) = 4.0 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification DGSDevice Package Marking RemarkTMP4N90 / TMPF4N90 TO-220 / TO-220F TMP4N90 / TMPF4N90 RoHSTMP4N90G / TMPF4N90G TO-220 / T

 8.1. Size:571K  trinnotech
tmp4n60 tmpf4n60.pdf

TMPF4N90
TMPF4N90

TMP4N60/TMPF4N60 TMP4N60G/TMPF4N60G VDSS = 660 V @Tjmax Features ID = 4A Low gate charge RDS(on) = 2.55 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP4N60 / TMPF4N60 TO-220 / TO-220F TMP4N60 / TMPF4N60 RoHS TMP4N60G / TMPF4

 8.2. Size:608K  trinnotech
tmp4n65az tmpf4n65az.pdf

TMPF4N90
TMPF4N90

TMP4N65AZ(G)/TMPF4N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 4.0A

 8.3. Size:618K  trinnotech
tmp4n60az tmpf4n60az.pdf

TMPF4N90
TMPF4N90

TMP4N60AZ(G)/TMPF4N60AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.0A

 8.4. Size:612K  trinnotech
tmp4n80 tmpf4n80.pdf

TMPF4N90
TMPF4N90

TMP4N80/TMPF4N80 TMP4N80G/TMPF4N80G VDSS = 880 V @Tjmax Features ID = 4A Low gate charge RDS(ON) = 3.0 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP4N80 TO-220 TMP4N80 RoHS TMPF4N80G TO-220F TMPF4N80G Halogen Free Absol

 8.5. Size:624K  trinnotech
tmp4n65 tmpf4n65.pdf

TMPF4N90
TMPF4N90

TMP4N65(G)/TMPF4N65(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 4A

 8.6. Size:628K  trinnotech
tmp4n65z tmpf4n65z.pdf

TMPF4N90
TMPF4N90

TMP4N65Z(G)/TMPF4N65Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 4A

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: MDQ16N50GTH

 

 
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