TMPF6N65 Datasheet. Specs and Replacement

Type Designator: TMPF6N65  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 39 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm

Package: TO-220F

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TMPF6N65 substitution

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TMPF6N65 datasheet

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TMPF6N65

TMP6N65/TMPF6N65 TMP6N65G/TMPF6N65G VDSS = 715 V @Tjmax Features ID = 5.5A Low gate charge RDS(on) = 1.6 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP6N65 / TMPF6N65 TO-220 / TO-220F TMP6N65 / TMPF6N65 RoHS TMP6N65G / TMPF... See More ⇒

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TMPF6N65

TMP6N70(G)/TMPF6N70(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 700V 5.0A ... See More ⇒

 9.1. Size:607K  trinnotech
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TMPF6N65

TMP630Z(G)/TMPF630Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on)MAX 100% avalanche tested 200V 9A ... See More ⇒

Detailed specifications: TMPF4N65Z, TMPF4N80, TMPF4N90, TMPF5N50, TMPF5N50SG, TMPF5N60AZ, TMPF5N60Z, TMPF630Z, 7N65, TMPF6N70, TMPF7N60Z, TMPF7N65AZ, TMPF7N65Z, TMPF7N90, TMPF830, TMPF830AZ, TMPF830Z

Keywords - TMPF6N65 MOSFET specs

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