TMPF7N90 Datasheet. Specs and Replacement
Type Designator: TMPF7N90 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 38 nS
Cossⓘ - Output Capacitance: 133 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm
Package: TO-220F
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TMPF7N90 substitution
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TMPF7N90 datasheet
tmp7n90 tmpf7n90.pdf
TMP7N90/TMPF7N90G VDSS = 990 V @Tjmax Features ID = 7A Low gate charge RDS(ON) = 1.9 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP7N90 TO-220 TMP7N90 RoHS TMPF7N90G TO-220F TMPF7N90G Halogen Free Absolute Maximum Ratings ... See More ⇒
tmp7n65az tmpf7n65az.pdf
TMP7N65AZ(G)/TMPF7N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 6.5A ... See More ⇒
tmp7n65z tmpf7n65z.pdf
TMP7N65Z(G)/TMPF7N65Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 6.5A ... See More ⇒
tmp7n60z tmpf7n60z.pdf
TMP7N60Z(G)/TMPF7N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 7A ... See More ⇒
Detailed specifications: TMPF5N60AZ, TMPF5N60Z, TMPF630Z, TMPF6N65, TMPF6N70, TMPF7N60Z, TMPF7N65AZ, TMPF7N65Z, 2SK3878, TMPF830, TMPF830AZ, TMPF830Z, TMPF8N25Z, TMPF8N50Z, TMPF8N60AZ, TMPF8N80, TMPF9N50
Keywords - TMPF7N90 MOSFET specs
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