TMPF7N90 Datasheet. Specs and Replacement

Type Designator: TMPF7N90  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 38 nS

Cossⓘ - Output Capacitance: 133 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm

Package: TO-220F

  📄📄 Copy 

TMPF7N90 substitution

- MOSFET ⓘ Cross-Reference Search

 

TMPF7N90 datasheet

 ..1. Size:440K  trinnotech
tmp7n90 tmpf7n90.pdf pdf_icon

TMPF7N90

TMP7N90/TMPF7N90G VDSS = 990 V @Tjmax Features ID = 7A Low gate charge RDS(ON) = 1.9 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP7N90 TO-220 TMP7N90 RoHS TMPF7N90G TO-220F TMPF7N90G Halogen Free Absolute Maximum Ratings ... See More ⇒

 8.1. Size:615K  trinnotech
tmp7n65az tmpf7n65az.pdf pdf_icon

TMPF7N90

TMP7N65AZ(G)/TMPF7N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 6.5A ... See More ⇒

 8.2. Size:616K  trinnotech
tmp7n65z tmpf7n65z.pdf pdf_icon

TMPF7N90

TMP7N65Z(G)/TMPF7N65Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 6.5A ... See More ⇒

 8.3. Size:611K  trinnotech
tmp7n60z tmpf7n60z.pdf pdf_icon

TMPF7N90

TMP7N60Z(G)/TMPF7N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 7A ... See More ⇒

Detailed specifications: TMPF5N60AZ, TMPF5N60Z, TMPF630Z, TMPF6N65, TMPF6N70, TMPF7N60Z, TMPF7N65AZ, TMPF7N65Z, 2SK3878, TMPF830, TMPF830AZ, TMPF830Z, TMPF8N25Z, TMPF8N50Z, TMPF8N60AZ, TMPF8N80, TMPF9N50

Keywords - TMPF7N90 MOSFET specs

 TMPF7N90 cross reference

 TMPF7N90 equivalent finder

 TMPF7N90 pdf lookup

 TMPF7N90 substitution

 TMPF7N90 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility