TMPF8N60AZ Datasheet. Specs and Replacement

Type Designator: TMPF8N60AZ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 39 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO-220F

  📄📄 Copy 

TMPF8N60AZ substitution

- MOSFET ⓘ Cross-Reference Search

 

TMPF8N60AZ datasheet

 ..1. Size:625K  trinnotech
 tmp8n60az tmpf8n60az.pdf pdf_icon

TMPF8N60AZ

TMP8N60AZ(G)/TMPF8N60AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 7.5A ... See More ⇒

 8.1. Size:605K  trinnotech
 tmp8n50z tmpf8n50z.pdf pdf_icon

TMPF8N60AZ

TMP8N50Z(G)/TMPF8N50Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 8A ... See More ⇒

 8.2. Size:603K  trinnotech
 tmp8n25z tmpf8n25z.pdf pdf_icon

TMPF8N60AZ

TMP8N25Z(G)/TMPF8N25Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on)MAX 100% avalanche tested 250V 8A ... See More ⇒

 8.3. Size:1284K  trinnotech
 tmp8n80 tmpf8n80.pdf pdf_icon

TMPF8N60AZ

TMP8N80(G)/TMPF8N80(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 100% avalanche tested 800V 8A ... See More ⇒

SHOW MORE

Detailed specifications: TMPF7N65AZ, TMPF7N65Z, TMPF7N90, TMPF830, TMPF830AZ, TMPF830Z, TMPF8N25Z, TMPF8N50Z, AO3401, TMPF8N80, TMPF9N50, TMPF9N50S, TMPF9N60, TMPF9N70, TMPF9N90, TMT2N40G, TMT2N60ZG

Keywords - TMPF8N60AZ MOSFET specs

 TMPF8N60AZ cross reference

 TMPF8N60AZ equivalent finder

 TMPF8N60AZ pdf lookup

 TMPF8N60AZ substitution

 TMPF8N60AZ replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.