All MOSFET. TMT3N30G Datasheet

 

TMT3N30G Datasheet and Replacement


   Type Designator: TMT3N30G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 1.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 4.4 nC
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.15 Ohm
   Package: SOT-223
 

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TMT3N30G Datasheet (PDF)

 ..1. Size:311K  trinnotech
 tmt3n30g.pdf pdf_icon

TMT3N30G

TMT3N30GVDSS = 330V @TjmaxFeaturesID = 3A Low gate chargeRDS(on) = 2.15 W(max) @ VGS= 10 V 100% avalanche testedRDS(on) = 1.73 W(typ) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationDDSGDGSDevice Package MarkingTMT3N30G SOT223 TMT3N30GAbsolute Maximum Ratings Parameter Symbol TMT3N30G Un

 9.1. Size:399K  trinnotech
 tmt3n40zg.pdf pdf_icon

TMT3N30G

TMT3N40ZG Features VDSS = 440 V @Tjmax Low gate charge ID = 2A 100% avalanche tested RDS(on) = 3.4 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance D D G S D G S Device Package Marking Remark TMT3N40ZG SOT-223 TMT3N40ZG Halogen Free Absolute Maximum

Datasheet: TMPF8N80 , TMPF9N50 , TMPF9N50S , TMPF9N60 , TMPF9N70 , TMPF9N90 , TMT2N40G , TMT2N60ZG , 4N60 , TMT3N40ZG , TMU16N25Z , TMU18N20Z , TMU2N40 , TMU2N60AZ , TMU2N60Z , TMU2N65AZ , TMU3N40ZG .

Keywords - TMT3N30G MOSFET datasheet

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