TMT3N40ZG Datasheet. Specs and Replacement
Type Designator: TMT3N40ZG 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 32 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.4 Ohm
Package: SOT-223
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TMT3N40ZG substitution
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TMT3N40ZG datasheet
tmt3n40zg.pdf
TMT3N40ZG Features VDSS = 440 V @Tjmax Low gate charge ID = 2A 100% avalanche tested RDS(on) = 3.4 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance D D G S D G S Device Package Marking Remark TMT3N40ZG SOT-223 TMT3N40ZG Halogen Free Absolute Maximum ... See More ⇒
tmt3n30g.pdf
TMT3N30G VDSS = 330V @Tjmax Features ID = 3A Low gate charge RDS(on) = 2.15 W(max) @ VGS= 10 V 100% avalanche tested RDS(on) = 1.73 W(typ) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D D S G D G S Device Package Marking TMT3N30G SOT223 TMT3N30G Absolute Maximum Ratings Parameter Symbol TMT3N30G Un... See More ⇒
Detailed specifications: TMPF9N50, TMPF9N50S, TMPF9N60, TMPF9N70, TMPF9N90, TMT2N40G, TMT2N60ZG, TMT3N30G, 5N65, TMU16N25Z, TMU18N20Z, TMU2N40, TMU2N60AZ, TMU2N60Z, TMU2N65AZ, TMU3N40ZG, TMU3N50AZ
Keywords - TMT3N40ZG MOSFET specs
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