All MOSFET. TMT3N40ZG Datasheet

 

TMT3N40ZG Datasheet and Replacement


   Type Designator: TMT3N40ZG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 1.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 32 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.4 Ohm
   Package: SOT-223
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TMT3N40ZG Datasheet (PDF)

 ..1. Size:399K  trinnotech
 tmt3n40zg.pdf pdf_icon

TMT3N40ZG

TMT3N40ZG Features VDSS = 440 V @Tjmax Low gate charge ID = 2A 100% avalanche tested RDS(on) = 3.4 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance D D G S D G S Device Package Marking Remark TMT3N40ZG SOT-223 TMT3N40ZG Halogen Free Absolute Maximum

 9.1. Size:311K  trinnotech
 tmt3n30g.pdf pdf_icon

TMT3N40ZG

TMT3N30GVDSS = 330V @TjmaxFeaturesID = 3A Low gate chargeRDS(on) = 2.15 W(max) @ VGS= 10 V 100% avalanche testedRDS(on) = 1.73 W(typ) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationDDSGDGSDevice Package MarkingTMT3N30G SOT223 TMT3N30GAbsolute Maximum Ratings Parameter Symbol TMT3N30G Un

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History: 20N03L-TO252 | 2N6762JTXV

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