All MOSFET. TMU7N60Z Datasheet

 

TMU7N60Z Datasheet and Replacement


   Type Designator: TMU7N60Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 104 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: I-PAK
 

 TMU7N60Z substitution

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TMU7N60Z Datasheet (PDF)

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TMU7N60Z

TMD7N60Z(G)/TMU7N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 7A

 7.1. Size:559K  cn wuxi unigroup
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TMU7N60Z

TMA7N60H, TMC7N60H, TMD7N60H, TMU7N60H Wuxi Unigroup Microelectronics Company 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TM

 8.1. Size:461K  trinnotech
 tmd7n65az tmu7n65az.pdf pdf_icon

TMU7N60Z

TMD7N65AZ(G)/TMU7N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 6.5A

 8.2. Size:463K  trinnotech
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TMU7N60Z

TMD7N65Z(G)/TMU7N65Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 650V 6.5A

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Datasheet: TMU4N65Z , TMU5N40ZG , TMU5N50 , TMU5N50G , TMU5N60AZ , TMU5N60Z , TMU630Z , TMU6N65G , 2N60 , TMU7N65AZ , TMU7N65Z , TMU830 , TMU830AZ , TMU830Z , TMU8N25Z , TMU8N50Z , TMU8N60AZ .

History: 2SK303

Keywords - TMU7N60Z MOSFET datasheet

 TMU7N60Z cross reference
 TMU7N60Z equivalent finder
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