TMU7N65AZ Specs and Replacement
Type Designator: TMU7N65AZ
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 46 nS
Cossⓘ - Output Capacitance: 103 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: I-PAK
TMU7N65AZ substitution
- MOSFET ⓘ Cross-Reference Search
TMU7N65AZ datasheet
tmd7n65az tmu7n65az.pdf
TMD7N65AZ(G)/TMU7N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 6.5A ... See More ⇒
tmd7n65z tmu7n65z.pdf
TMD7N65Z(G)/TMU7N65Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 650V 6.5A ... See More ⇒
tma7n65h tmp7n65h tmd7n65h tmu7n65h.pdf
TMA7N65H, TMP7N65H, TMD7N65H, TMU7N65H Wuxi Unigroup Microelectronics Company 650V N-Channel MOSFET FEATURES l Fast switching l 100% avalanche tested l Improved dv/dt capability APPLICATIONS l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply (UPS) l Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA7N65H TO-220F A7N65H TM... See More ⇒
tmd7n60z tmu7n60z.pdf
TMD7N60Z(G)/TMU7N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 7A ... See More ⇒
Detailed specifications: TMU5N40ZG, TMU5N50, TMU5N50G, TMU5N60AZ, TMU5N60Z, TMU630Z, TMU6N65G, TMU7N60Z, IRF520, TMU7N65Z, TMU830, TMU830AZ, TMU830Z, TMU8N25Z, TMU8N50Z, TMU8N60AZ, IRF1405ZL-7PPBF
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