All MOSFET. TMU830AZ Datasheet

 

TMU830AZ Datasheet and Replacement


   Type Designator: TMU830AZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 98.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 78 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: I-PAK
 

 TMU830AZ substitution

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TMU830AZ Datasheet (PDF)

 ..1. Size:451K  trinnotech
 tmd830az tmu830az.pdf pdf_icon

TMU830AZ

TMD830AZ(G)/TMU830AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 4.5A

 8.1. Size:468K  trinnotech
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TMU830AZ

TMD830(G)/TMU830(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 100% avalanche tested 500V 4.5A

 8.2. Size:465K  trinnotech
 tmd830z tmu830z.pdf pdf_icon

TMU830AZ

TMD830Z(G)/TMU830Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 4.5A

Datasheet: TMU5N60AZ , TMU5N60Z , TMU630Z , TMU6N65G , TMU7N60Z , TMU7N65AZ , TMU7N65Z , TMU830 , 8N60 , TMU830Z , TMU8N25Z , TMU8N50Z , TMU8N60AZ , IRF1405ZL-7PPBF , IRF1405ZLPBF , IRF1405ZPBF , IRF1405ZS-7PPBF .

History: IPS118N10NG | IPS135N03LG | FDD8778 | HUF75639SF085A | IPS12CN10LG | SIHG22N60S | SSM3K56MFV

Keywords - TMU830AZ MOSFET datasheet

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