TMU830AZ Specs and Replacement
Type Designator: TMU830AZ
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 98.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 78 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: I-PAK
TMU830AZ substitution
- MOSFET ⓘ Cross-Reference Search
TMU830AZ datasheet
tmd830az tmu830az.pdf
TMD830AZ(G)/TMU830AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 4.5A ... See More ⇒
tmd830 tmu830.pdf
TMD830(G)/TMU830(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 100% avalanche tested 500V 4.5A ... See More ⇒
tmd830z tmu830z.pdf
TMD830Z(G)/TMU830Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 4.5A ... See More ⇒
Detailed specifications: TMU5N60AZ, TMU5N60Z, TMU630Z, TMU6N65G, TMU7N60Z, TMU7N65AZ, TMU7N65Z, TMU830, IRFZ24N, TMU830Z, TMU8N25Z, TMU8N50Z, TMU8N60AZ, IRF1405ZL-7PPBF, IRF1405ZLPBF, IRF1405ZPBF, IRF1405ZS-7PPBF
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