All MOSFET. FMP03N60E Datasheet

 

FMP03N60E Datasheet and Replacement


   Type Designator: FMP03N60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.5 nS
   Cossⓘ - Output Capacitance: 59 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
   Package: TO-220AB
 

 FMP03N60E substitution

   - MOSFET ⓘ Cross-Reference Search

 

FMP03N60E Datasheet (PDF)

 ..1. Size:511K  fuji
 fmp03n60e.pdf pdf_icon

FMP03N60E

FMP03N60E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220ABLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)

Datasheet: TMU8N60AZ , IRF1405ZL-7PPBF , IRF1405ZLPBF , IRF1405ZPBF , IRF1405ZS-7PPBF , IRF1405ZSPBF , IRF1407PBF , IRF140SMD , IRF1405 , FMP05N50E , FMP05N60E , FMP06N60E , FMP06N60ES , FMP07N50E , FMP08N50E , FMP10N60E , FMP11N60E .

History: UT3N06G-TN3-R | AFN4210W | OSG65R900FEF | VBZE20P03 | SFF23N60Z | STI12N65M5 | IXTA200N085T7

Keywords - FMP03N60E MOSFET datasheet

 FMP03N60E cross reference
 FMP03N60E equivalent finder
 FMP03N60E lookup
 FMP03N60E substitution
 FMP03N60E replacement

 

 
Back to Top

 


 
.