FMP03N60E Datasheet and Replacement
Type Designator: FMP03N60E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7.5 nS
Cossⓘ - Output Capacitance: 59 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
Package: TO-220AB
FMP03N60E substitution
FMP03N60E Datasheet (PDF)
fmp03n60e.pdf

FMP03N60E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220ABLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)
Datasheet: TMU8N60AZ , IRF1405ZL-7PPBF , IRF1405ZLPBF , IRF1405ZPBF , IRF1405ZS-7PPBF , IRF1405ZSPBF , IRF1407PBF , IRF140SMD , P0903BDG , FMP05N50E , FMP05N60E , FMP06N60E , FMP06N60ES , FMP07N50E , FMP08N50E , FMP10N60E , FMP11N60E .
History: NTLGF3501NT2G | DHS022N06 | SSM4435M | MTN2572J3 | DHB8290 | MTN2N60FP | AON7528
Keywords - FMP03N60E MOSFET datasheet
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History: NTLGF3501NT2G | DHS022N06 | SSM4435M | MTN2572J3 | DHB8290 | MTN2N60FP | AON7528



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