All MOSFET. FMP30N60S1 Datasheet

 

FMP30N60S1 Datasheet and Replacement


   Type Designator: FMP30N60S1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 73 nC
   tr ⓘ - Rise Time: 57 nS
   Cossⓘ - Output Capacitance: 4670 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
   Package: TO-220
 

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FMP30N60S1 Datasheet (PDF)

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FMP30N60S1

http://www.fujielectric.com/products/semiconductor/FMP30N60S1 FUJI POWER MOSFETSuper J-MOS series N-Channel enhancement mode power MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicLow on-state resistanceTO-22010+0.5 0 4.50.21.30.2Low switching losseasy to use (more controllabe switching dV/dt by R )gDrain(D)ApplicationsUPS1.2 0.2ServerPRE-

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: F21F60CPM | IXTP460P2 | WFP13N50

Keywords - FMP30N60S1 MOSFET datasheet

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