All MOSFET. FMP76-010T Datasheet

 

FMP76-010T MOSFET. Datasheet pdf. Equivalent


   Type Designator: FMP76-010T
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 89 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 62 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 104 nC
   trⓘ - Rise Time: 47 nS
   Cossⓘ - Output Capacitance: 635 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: I4-PAK

 FMP76-010T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FMP76-010T Datasheet (PDF)

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 fmp76-010t.pdf

FMP76-010T FMP76-010T

Advance Technical Information P CH. N CH.TrenchTM P & N-ChannelFMP76-010TPower MOSFETVDSS - 100V 100VCommon Drain Topology34 ID25 - 54A 62AT155 RDS(on) 24m 11m 43trr(typ) 70ns 67nsT21122ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsTJ -55 ... +150 CTJM 150 CTstg -55 ... +150 CVISOLD 50/60HZ, RMS, t =

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: IXFH6N90

 

 
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