All MOSFET. FMP76-010T Datasheet

 

FMP76-010T Datasheet and Replacement


   Type Designator: FMP76-010T
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 89 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 62 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 104 nC
   tr ⓘ - Rise Time: 47 nS
   Cossⓘ - Output Capacitance: 635 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: I4-PAK
 

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FMP76-010T Datasheet (PDF)

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FMP76-010T

Advance Technical Information P CH. N CH.TrenchTM P & N-ChannelFMP76-010TPower MOSFETVDSS - 100V 100VCommon Drain Topology34 ID25 - 54A 62AT155 RDS(on) 24m 11m 43trr(typ) 70ns 67nsT21122ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsTJ -55 ... +150 CTJM 150 CTstg -55 ... +150 CVISOLD 50/60HZ, RMS, t =

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFP460 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

Keywords - FMP76-010T MOSFET datasheet

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