FMR21N50ES Specs and Replacement
Type Designator: FMR21N50ES
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 135 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 21 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 320 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
Package: TO-3PF
FMR21N50ES substitution
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FMR21N50ES datasheet
fmr21n50es.pdf
FMR21N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3PF Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2 0.5V) ... See More ⇒
Detailed specifications: FMP20N60S1, FMP30N60S1, FMP76-010T, FMR09N90E, FMR11N90E, FMR17N60ES, FMR19N60E, FMR19N60ES, IRFB4110, FMR23N50ES, FMR23N60E, FMR23N60ES, FMR28N50E, FMR28N50ES, FMV03N60E, FMV05N50E, FMV05N60E
Keywords - FMR21N50ES MOSFET specs
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