FMV21N50ES MOSFET PDF: N-Ch, 500V, 21A. Full specification with pinout and replacement list

FMV21N50ES PDF Specs and Replacement

   Type Designator: FMV21N50ES
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 21 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
   Package: TO-220F

FMV21N50ES substitution

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FMV21N50ES PDF Specs

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FMV21N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F (SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2... See More ⇒

Detailed specifications: FMV16N60E , FMV16N60ES , FMV17N60ES , FMV19N60E , FMV19N60ES , FMV20N50E , FMV20N50ES , FMV20N60S1 , IRF1010E , FMV23N50ES , FMV24N25G , FMV30N60S1 , FMW20N60S1HF , FMW30N60S1HF , FMW47N60S1HF , FMW79N60S1HF , FP10W50C .