All MOSFET. FMV24N25G Datasheet

 

FMV24N25G Datasheet and Replacement


   Type Designator: FMV24N25G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 36 nC
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: TO-220F
 

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FMV24N25G Datasheet (PDF)

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FMV24N25G

http://www.fujisemi.comFMV24N25G FUJI POWER MOSFETSuper FAP-G series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicHigh speed switchingTO-220F(SLS)Low on-resistanceNo secondary breadownDrain(D)Low driving powerAvalanche-proofApplicationsGate(G)Switching regulatorsSource(S)UPS (Uninterruptible Power Supply)DC-DC converter

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: TK14G65W | IPD50N06S4L-12

Keywords - FMV24N25G MOSFET datasheet

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