FMW79N60S1HF PDF and Equivalents Search

 

FMW79N60S1HF Specs and Replacement

Type Designator: FMW79N60S1HF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 545 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 68 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V

Qg ⓘ - Total Gate Charge: 203 nC

tr ⓘ - Rise Time: 107 nS

Cossⓘ - Output Capacitance: 14500 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: TO-247

FMW79N60S1HF substitution

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FMW79N60S1HF datasheet

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FMW79N60S1HF

http //www.fujielectric.com/products/semiconductor/ FMW79N60S1HF FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Low on-state resistance TO-247-P2 Low switching loss easy to use (more controllabe switching dV/dt by R ) g Drain(D) Applications UPS Server Gate(G) Telecom Source(S) ... See More ⇒

Detailed specifications: FMV20N60S1 , FMV21N50ES , FMV23N50ES , FMV24N25G , FMV30N60S1 , FMW20N60S1HF , FMW30N60S1HF , FMW47N60S1HF , STP80NF70 , FP10W50C , FP10W50VX2 , FP10W90 , FP10W90HVX2 , FP11W60C3 , FP20W50VX2 , FP20W60C3 , FP3W90 .

Keywords - FMW79N60S1HF MOSFET specs

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