All MOSFET. FMW79N60S1HF Datasheet

 

FMW79N60S1HF MOSFET. Datasheet pdf. Equivalent

Type Designator: FMW79N60S1HF

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 545 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V

Maximum Drain Current |Id|: 68 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 203 nC

Rise Time (tr): 107 nS

Drain-Source Capacitance (Cd): 14500 pF

Maximum Drain-Source On-State Resistance (Rds): 0.04 Ohm

Package: TO-247

FMW79N60S1HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FMW79N60S1HF Datasheet (PDF)

1.1. fmw79n60s1hf.pdf Size:576K _upd-mosfet

FMW79N60S1HF
FMW79N60S1HF

http://www.fujielectric.com/products/semiconductor/ FMW79N60S1HF FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Low on-state resistance TO-247-P2 Low switching loss easy to use (more controllabe switching dV/dt by R ) g Drain(D) Applications UPS Server Gate(G) Telecom ① ② ③ Source(S)

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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