All MOSFET. FMW79N60S1HF Datasheet

 

FMW79N60S1HF Datasheet and Replacement


   Type Designator: FMW79N60S1HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 545 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id| ⓘ - Maximum Drain Current: 68 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 203 nC
   tr ⓘ - Rise Time: 107 nS
   Cossⓘ - Output Capacitance: 14500 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO-247
 

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FMW79N60S1HF Datasheet (PDF)

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FMW79N60S1HF

http://www.fujielectric.com/products/semiconductor/FMW79N60S1HF FUJI POWER MOSFETSuper J-MOS series N-Channel enhancement mode power MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicLow on-state resistanceTO-247-P2Low switching losseasy to use (more controllabe switching dV/dt by R )gDrain(D)ApplicationsUPSServerGate(G)Telecom Source(S)

Datasheet: FMV20N60S1 , FMV21N50ES , FMV23N50ES , FMV24N25G , FMV30N60S1 , FMW20N60S1HF , FMW30N60S1HF , FMW47N60S1HF , AO3400 , FP10W50C , FP10W50VX2 , FP10W90 , FP10W90HVX2 , FP11W60C3 , FP20W50VX2 , FP20W60C3 , FP3W90 .

Keywords - FMW79N60S1HF MOSFET datasheet

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