All MOSFET. FQA12N60 Datasheet

 

FQA12N60 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQA12N60

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 240 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 12 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 42 nC

Rise Time (tr): 115 nS

Drain-Source Capacitance (Cd): 200 pF

Maximum Drain-Source On-State Resistance (Rds): 0.7 Ohm

Package: TO-3P

FQA12N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQA12N60 Datasheet (PDF)

1.1. fqa12n60.pdf Size:535K _upd-mosfet

FQA12N60 FQA12N60

April 2000 TM QFET QFET QFET QFET FQA12N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 12A, 600V, RDS(on) = 0.7 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 42 nC) planar stripe, DMOS technology. • Low Crss ( typical 25 pF) This advanced technology has been e

5.1. fqa12p20.pdf Size:652K _upd-mosfet

FQA12N60 FQA12N60

May 2000 TM QFET QFET QFET QFET FQA12P20 200V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -12.6A, -200V, RDS(on) = 0.47Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 31 nC) planar stripe, DMOS technology. • Low Crss ( typical 30 pF) This advanced technology has been

Datasheet: FP5W90HVX2 , FP7W90HVX2 , FP8V50 , FQA10N60C , FQA10N80 , FQA10N80C , FQA11N90 , FQA11N90C , IRFBC40 , FQA12P20 , FQA13N50 , FQA13N50C , FQA13N80 , FQA14N30 , FQA16N25C , FQA16N50 , FQA17N40 .

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