FQA12N60 Specs and Replacement

Type Designator: FQA12N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 240 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 115 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm

Package: TO-3P

FQA12N60 substitution

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FQA12N60 datasheet

 ..1. Size:535K  fairchild semi
 fqa12n60.pdf pdf_icon

FQA12N60

April 2000 TM QFET QFET QFET QFET FQA12N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 12A, 600V, RDS(on) = 0.7 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 42 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been e... See More ⇒

 9.1. Size:652K  fairchild semi
 fqa12p20.pdf pdf_icon

FQA12N60

May 2000 TM QFET QFET QFET QFET FQA12P20 200V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -12.6A, -200V, RDS(on) = 0.47 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been... See More ⇒

Detailed specifications: FP5W90HVX2, FP7W90HVX2, FP8V50, FQA10N60C, FQA10N80, FQA10N80C, FQA11N90, FQA11N90C, IRF2807, FQA12P20, FQA13N50, FQA13N50C, FQA13N80, FQA14N30, FQA16N25C, FQA16N50, FQA17N40

Keywords - FQA12N60 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.