All MOSFET. FQA20N40 Datasheet

 

FQA20N40 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQA20N40

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 200 W

Maximum Drain-Source Voltage |Vds|: 400 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 19.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 60 nC

Rise Time (tr): 210 nS

Drain-Source Capacitance (Cd): 370 pF

Maximum Drain-Source On-State Resistance (Rds): 0.22 Ohm

Package: TO-3P

FQA20N40 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQA20N40 Datasheet (PDF)

1.1. fqa20n40.pdf Size:712K _upd-mosfet

FQA20N40
FQA20N40

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 19.5A, 400V, RDS(on) = 0.22Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 60 nC) planar stripe, DMOS technology. • Low Crss ( typical 45 pF) This advanced technology has bee

Datasheet: FQA13N50C , FQA13N80 , FQA14N30 , FQA16N25C , FQA16N50 , FQA17N40 , FQA17P10 , FQA19N20L , BUK455-200A , FQA22P10 , FQA24N50_F109 , FQA24N50F , FQA28N15_F109 , FQA28N50_F109 , FQA28N50F , FQA33N10 , FQA33N10L .

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