FQA20N40 Datasheet. Specs and Replacement

Type Designator: FQA20N40  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 19.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 210 nS

Cossⓘ - Output Capacitance: 370 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm

Package: TO-3P

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FQA20N40 datasheet

 ..1. Size:712K  fairchild semi
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FQA20N40

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 19.5A, 400V, RDS(on) = 0.22 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 60 nC) planar stripe, DMOS technology. Low Crss ( typical 45 pF) This advanced technology has bee... See More ⇒

Detailed specifications: FQA13N50C, FQA13N80, FQA14N30, FQA16N25C, FQA16N50, FQA17N40, FQA17P10, FQA19N20L, 7N60, FQA22P10, FQA24N50F109, FQA24N50F, FQA28N15F109, FQA28N50F109, FQA28N50F, FQA33N10, FQA33N10L

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