All MOSFET. FQA34N20L Datasheet

 

FQA34N20L Datasheet and Replacement


   Type Designator: FQA34N20L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 210 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 34 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 520 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: TO-3P
 

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FQA34N20L Datasheet (PDF)

 ..1. Size:667K  fairchild semi
 fqa34n20l.pdf pdf_icon

FQA34N20L

June 2000TMQFETQFETQFETQFETFQA34N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 34A, 200V, RDS(on) = 0.075 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 55 nC)planar stripe, DMOS technology. Low Crss ( typical 52 pF)This advanced technology has

 6.1. Size:726K  fairchild semi
 fqa34n20.pdf pdf_icon

FQA34N20L

April 2000TMQFETQFETQFETQFET 200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 34A, 200V, RDS(on) = 0.075 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 60 nC)planar stripe, DMOS technology. Low Crss ( typical 55 pF)This advanced technology has been

 7.1. Size:687K  fairchild semi
 fqa34n25.pdf pdf_icon

FQA34N20L

October 2001FQA34N25250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 34A, 250V, RDS(on) = 0.085 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 60 nC)planar, DMOS technology. Low Crss ( typical 60 pF)This advanced technology has been especially tailored to Fast s

Datasheet: FQA24N50F109 , FQA24N50F , FQA28N15F109 , FQA28N50F109 , FQA28N50F , FQA33N10 , FQA33N10L , FQA34N20 , MMD60R360PRH , FQA34N25 , FQA35N40 , FQA36P15F109 , FQA44N08 , FQA44N10 , FQA46N15F109 , FQA47P06 , FQA48N20 .

History: FN6005

Keywords - FQA34N20L MOSFET datasheet

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