FQA34N20L Datasheet. Specs and Replacement

Type Designator: FQA34N20L  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 210 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 34 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 520 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm

Package: TO-3P

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FQA34N20L datasheet

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FQA34N20L

June 2000 TM QFET QFET QFET QFET FQA34N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 34A, 200V, RDS(on) = 0.075 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 55 nC) planar stripe, DMOS technology. Low Crss ( typical 52 pF) This advanced technology has ... See More ⇒

 6.1. Size:726K  fairchild semi
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FQA34N20L

April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 34A, 200V, RDS(on) = 0.075 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 60 nC) planar stripe, DMOS technology. Low Crss ( typical 55 pF) This advanced technology has been ... See More ⇒

 7.1. Size:687K  fairchild semi
fqa34n25.pdf pdf_icon

FQA34N20L

October 2001 FQA34N25 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 34A, 250V, RDS(on) = 0.085 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 60 nC) planar, DMOS technology. Low Crss ( typical 60 pF) This advanced technology has been especially tailored to Fast s... See More ⇒

Detailed specifications: FQA24N50F109, FQA24N50F, FQA28N15F109, FQA28N50F109, FQA28N50F, FQA33N10, FQA33N10L, FQA34N20, 3401, FQA34N25, FQA35N40, FQA36P15F109, FQA44N08, FQA44N10, FQA46N15F109, FQA47P06, FQA48N20

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