All MOSFET. FQA35N40 Datasheet

 

FQA35N40 Datasheet and Replacement


   Type Designator: FQA35N40
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 310 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 360 nS
   Cossⓘ - Output Capacitance: 730 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
   Package: TO-3P
 

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FQA35N40 Datasheet (PDF)

 ..1. Size:738K  fairchild semi
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FQA35N40

April 2000TMQFETQFETQFETQFET 400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 35A, 400V, RDS(on) = 0.105 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 110 nC)planar stripe, DMOS technology. Low Crss ( typical 65 pF)This advanced technology has bee

Datasheet: FQA28N15F109 , FQA28N50F109 , FQA28N50F , FQA33N10 , FQA33N10L , FQA34N20 , FQA34N20L , FQA34N25 , HY1906P , FQA36P15F109 , FQA44N08 , FQA44N10 , FQA46N15F109 , FQA47P06 , FQA48N20 , FQA55N10 , FQA5N90 .

History: IRFNJ9130 | STG8820 | STM4820 | PDNM6ET20V05 | 4N90L-TF3T-T | HUF75639S3ST | STP43N60DM2

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