FQA35N40 Specs and Replacement

Type Designator: FQA35N40

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 310 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 360 nS

Cossⓘ - Output Capacitance: 730 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm

Package: TO-3P

FQA35N40 substitution

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FQA35N40 datasheet

 ..1. Size:738K  fairchild semi
 fqa35n40.pdf pdf_icon

FQA35N40

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 35A, 400V, RDS(on) = 0.105 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 110 nC) planar stripe, DMOS technology. Low Crss ( typical 65 pF) This advanced technology has bee... See More ⇒

Detailed specifications: FQA28N15F109, FQA28N50F109, FQA28N50F, FQA33N10, FQA33N10L, FQA34N20, FQA34N20L, FQA34N25, AOD4184A, FQA36P15F109, FQA44N08, FQA44N10, FQA46N15F109, FQA47P06, FQA48N20, FQA55N10, FQA5N90

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