FQA36P15F109 Datasheet and Replacement
Type Designator: FQA36P15F109
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 294 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 36 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 350 nS
Cossⓘ - Output Capacitance: 710 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: TO-3P
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FQA36P15F109 Datasheet (PDF)
fqa36p15 fqa36p15 f109.pdf

September 2010 QFETFQA36P15 / FQA36P15_F109150V P-Channel MOSFETFeatures Description -36A, -150V, RDS(on) = 0.09 @VGS = -10 V These P-Channel enhancement mode power field effect Low gate charge ( typical 81 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 110pF)This advanced technology has been espe
fqa36p15 f109.pdf

September 2010 QFETFQA36P15 / FQA36P15_F109150V P-Channel MOSFETFeatures Description -36A, -150V, RDS(on) = 0.09 @VGS = -10 V These P-Channel enhancement mode power field effect Low gate charge ( typical 81 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 110pF)This advanced technology has been espe
fqa36p15.pdf

isc P-Channel MOSFET Transistor FQA36P15FEATURESDrain Current : I = -36A@ T =25D CDrain Source Voltage: V = -150V(Min)DSSStatic Drain-Source On-Resistance: R = 90m(Max) @V = -10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: GKI07113 | MC08N005C | IRLR024 | CED05N8 | GT045N10T | AON6794 | BL10N70-A
Keywords - FQA36P15F109 MOSFET datasheet
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History: GKI07113 | MC08N005C | IRLR024 | CED05N8 | GT045N10T | AON6794 | BL10N70-A



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