All MOSFET. FQA46N15F109 Datasheet

 

FQA46N15F109 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FQA46N15F109
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 85 nC
   trⓘ - Rise Time: 320 nS
   Cossⓘ - Output Capacitance: 520 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: TO-3PN

 FQA46N15F109 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQA46N15F109 Datasheet (PDF)

 6.1. Size:788K  fairchild semi
 fqa46n15 fqa46n15 f109.pdf

FQA46N15F109 FQA46N15F109

August 2007 QFETFQA46N15 / FQA46N15_F109150V N-Channel MOSFETFeatures Description 50A, 150V, RDS(on) = 0.042 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 85 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 100pF)This advanced technology has been especiall

 6.2. Size:2297K  onsemi
 fqa46n15.pdf

FQA46N15F109 FQA46N15F109

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IXFE73N30Q

 

 
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