FQA46N15F109 Specs and Replacement

Type Designator: FQA46N15F109

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 320 nS

Cossⓘ - Output Capacitance: 520 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm

Package: TO-3PN

FQA46N15F109 substitution

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FQA46N15F109 datasheet

 6.1. Size:788K  fairchild semi
fqa46n15 fqa46n15 f109.pdf pdf_icon

FQA46N15F109

August 2007 QFET FQA46N15 / FQA46N15_F109 150V N-Channel MOSFET Features Description 50A, 150V, RDS(on) = 0.042 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 85 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 100pF) This advanced technology has been especiall... See More ⇒

 6.2. Size:2297K  onsemi
fqa46n15.pdf pdf_icon

FQA46N15F109

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Detailed specifications: FQA33N10L, FQA34N20, FQA34N20L, FQA34N25, FQA35N40, FQA36P15F109, FQA44N08, FQA44N10, AO4468, FQA47P06, FQA48N20, FQA55N10, FQA5N90, FQA65N06, FQA6N70, FQA6N80, FQA6N90

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