FQA47P06 Specs and Replacement
Type Designator: FQA47P06
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 214 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 55 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 450 nS
Cossⓘ - Output Capacitance: 1300 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
Package: TO-3PN
FQA47P06 substitution
- MOSFET ⓘ Cross-Reference Search
FQA47P06 datasheet
fqa47p06.pdf
May 2001 TM QFET FQA47P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -55A, -60V, RDS(on) = 0.026 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 84 nC) planar stripe, DMOS technology. Low Crss ( typical 320 pF) This advanced technology has been especially tailored... See More ⇒
Detailed specifications: FQA34N20, FQA34N20L, FQA34N25, FQA35N40, FQA36P15F109, FQA44N08, FQA44N10, FQA46N15F109, IRF730, FQA48N20, FQA55N10, FQA5N90, FQA65N06, FQA6N70, FQA6N80, FQA6N90, FQA7N60
Keywords - FQA47P06 MOSFET specs
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FQA47P06 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
