All MOSFET. FQA47P06 Datasheet

 

FQA47P06 Datasheet and Replacement


   Type Designator: FQA47P06
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 214 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 450 nS
   Cossⓘ - Output Capacitance: 1300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: TO-3PN
 

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FQA47P06 Datasheet (PDF)

 ..1. Size:741K  fairchild semi
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FQA47P06

May 2001TMQFETFQA47P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -55A, -60V, RDS(on) = 0.026 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 84 nC)planar stripe, DMOS technology. Low Crss ( typical 320 pF)This advanced technology has been especially tailored

Datasheet: FQA34N20 , FQA34N20L , FQA34N25 , FQA35N40 , FQA36P15F109 , FQA44N08 , FQA44N10 , FQA46N15F109 , BS170 , FQA48N20 , FQA55N10 , FQA5N90 , FQA65N06 , FQA6N70 , FQA6N80 , FQA6N90 , FQA7N60 .

History: CPC3714C | SML5020BN | SI4401DDY-T1-GE3 | PFF12N65 | STP180N4F6 | BUZ102 | STD25NF10T4

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