All MOSFET. FQA48N20 Datasheet

 

FQA48N20 Datasheet and Replacement


   Type Designator: FQA48N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 280 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 48 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 430 nS
   Cossⓘ - Output Capacitance: 700 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: TO-3P
 

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FQA48N20 Datasheet (PDF)

 ..1. Size:707K  fairchild semi
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FQA48N20

April 2000TMQFETQFETQFETQFET 200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 48A, 200V, RDS(on) = 0.05 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 100 nC)planar stripe, DMOS technology. Low Crss ( typical 75 pF)This advanced technology has been

Datasheet: FQA34N20L , FQA34N25 , FQA35N40 , FQA36P15F109 , FQA44N08 , FQA44N10 , FQA46N15F109 , FQA47P06 , IRFZ44N , FQA55N10 , FQA5N90 , FQA65N06 , FQA6N70 , FQA6N80 , FQA6N90 , FQA7N60 , FQA7N80 .

History: P7515BDB | SGM0410

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