FQA48N20 Specs and Replacement

Type Designator: FQA48N20

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 280 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 48 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 430 nS

Cossⓘ - Output Capacitance: 700 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: TO-3P

FQA48N20 substitution

- MOSFET ⓘ Cross-Reference Search

 

FQA48N20 datasheet

 ..1. Size:707K  fairchild semi
 fqa48n20.pdf pdf_icon

FQA48N20

April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 48A, 200V, RDS(on) = 0.05 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 100 nC) planar stripe, DMOS technology. Low Crss ( typical 75 pF) This advanced technology has been ... See More ⇒

Detailed specifications: FQA34N20L, FQA34N25, FQA35N40, FQA36P15F109, FQA44N08, FQA44N10, FQA46N15F109, FQA47P06, IRFZ44N, FQA55N10, FQA5N90, FQA65N06, FQA6N70, FQA6N80, FQA6N90, FQA7N60, FQA7N80

Keywords - FQA48N20 MOSFET specs

 FQA48N20 cross reference

 FQA48N20 equivalent finder

 FQA48N20 pdf lookup

 FQA48N20 substitution

 FQA48N20 replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.