FQA5N90 Specs and Replacement
Type Designator: FQA5N90
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 185 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 110 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
Package: TO-3P
FQA5N90 substitution
- MOSFET ⓘ Cross-Reference Search
FQA5N90 datasheet
fqa5n90.pdf
September 2000 TM QFET QFET QFET QFET FQA5N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.8A, 900V, RDS(on) = 2.3 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 13 pF) This advanced technology has be... See More ⇒
Detailed specifications: FQA35N40, FQA36P15F109, FQA44N08, FQA44N10, FQA46N15F109, FQA47P06, FQA48N20, FQA55N10, IRF740, FQA65N06, FQA6N70, FQA6N80, FQA6N90, FQA7N60, FQA7N80, FQA7N80C, FQA7N90
Keywords - FQA5N90 MOSFET specs
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