All MOSFET. FQA5N90 Datasheet

 

FQA5N90 Datasheet and Replacement


   Type Designator: FQA5N90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 185 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
   Package: TO-3P
 

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FQA5N90 Datasheet (PDF)

 ..1. Size:619K  fairchild semi
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FQA5N90

September 2000TMQFETQFETQFETQFETFQA5N90900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.8A, 900V, RDS(on) = 2.3 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 13 pF)This advanced technology has be

Datasheet: FQA35N40 , FQA36P15F109 , FQA44N08 , FQA44N10 , FQA46N15F109 , FQA47P06 , FQA48N20 , FQA55N10 , IRF740 , FQA65N06 , FQA6N70 , FQA6N80 , FQA6N90 , FQA7N60 , FQA7N80 , FQA7N80C , FQA7N90 .

History: NCEP01T18 | RU8205G

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