FQA65N06 Specs and Replacement
Type Designator: FQA65N06
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 183 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 72 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 160 nS
Cossⓘ - Output Capacitance: 700 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: TO-3P
FQA65N06 substitution
- MOSFET ⓘ Cross-Reference Search
FQA65N06 datasheet
fqa65n06.pdf
May 2001 TM QFET FQA65N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 72A, 60V, RDS(on) = 0.016 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 48 nC) planar stripe, DMOS technology. Low Crss ( typical 100 pF) This advanced technology has been especially tailored to... See More ⇒
fqa65n20.pdf
August 2001 TM QFET FQA65N20 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 65A, 200V, RDS(on) = 0.032 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 170 nC) planar stripe, DMOS technology. Low Crss ( typical 90 pF) This advanced technology has been especially tailor... See More ⇒
Detailed specifications: FQA36P15F109, FQA44N08, FQA44N10, FQA46N15F109, FQA47P06, FQA48N20, FQA55N10, FQA5N90, IRF840, FQA6N70, FQA6N80, FQA6N90, FQA7N60, FQA7N80, FQA7N80C, FQA7N90, FQA7N90M
Keywords - FQA65N06 MOSFET specs
FQA65N06 cross reference
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FQA65N06 substitution
FQA65N06 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
