All MOSFET. FQA65N06 Datasheet

 

FQA65N06 Datasheet and Replacement


   Type Designator: FQA65N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 183 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 72 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 160 nS
   Cossⓘ - Output Capacitance: 700 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: TO-3P
 

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FQA65N06 Datasheet (PDF)

 ..1. Size:651K  fairchild semi
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FQA65N06

May 2001TMQFETFQA65N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 72A, 60V, RDS(on) = 0.016 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 48 nC)planar stripe, DMOS technology. Low Crss ( typical 100 pF)This advanced technology has been especially tailored to

 8.1. Size:663K  fairchild semi
 fqa65n20.pdf pdf_icon

FQA65N06

August 2001TMQFETFQA65N20200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 65A, 200V, RDS(on) = 0.032 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 170 nC)planar stripe, DMOS technology. Low Crss ( typical 90 pF)This advanced technology has been especially tailor

Datasheet: FQA36P15F109 , FQA44N08 , FQA44N10 , FQA46N15F109 , FQA47P06 , FQA48N20 , FQA55N10 , FQA5N90 , IRF840 , FQA6N70 , FQA6N80 , FQA6N90 , FQA7N60 , FQA7N80 , FQA7N80C , FQA7N90 , FQA7N90M .

History: SSM5H10TU | KTK211 | RUF015N02TL | IRFP151FI | TK19A50W | STT3962N | APT10035LLLG

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