FQA85N06 Specs and Replacement

Type Designator: FQA85N06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 214 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 230 nS

Cossⓘ - Output Capacitance: 1150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: TO-3PN

FQA85N06 substitution

- MOSFET ⓘ Cross-Reference Search

 

FQA85N06 datasheet

 ..1. Size:669K  fairchild semi
 fqa85n06.pdf pdf_icon

FQA85N06

May 2001 TM QFET FQA85N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 100A, 60V, RDS(on) = 0.010 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 86 nC) planar stripe, DMOS technology. Low Crss ( typical 165 pF) This advanced technology has been especially tailored t... See More ⇒

Detailed specifications: FQA6N70, FQA6N80, FQA6N90, FQA7N60, FQA7N80, FQA7N80C, FQA7N90, FQA7N90M, IRLZ44N, FQA8N90C, FQA90N10V2, FQA9N50, FQA9N90C, FQAF10N80, FQAF11N40, FQAF11N90, FQAF12N60

Keywords - FQA85N06 MOSFET specs

 FQA85N06 cross reference

 FQA85N06 equivalent finder

 FQA85N06 pdf lookup

 FQA85N06 substitution

 FQA85N06 replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.