All MOSFET. FQA85N06 Datasheet

 

FQA85N06 Datasheet and Replacement


   Type Designator: FQA85N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 214 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 230 nS
   Cossⓘ - Output Capacitance: 1150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO-3PN
 

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FQA85N06 Datasheet (PDF)

 ..1. Size:669K  fairchild semi
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FQA85N06

May 2001TMQFETFQA85N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 100A, 60V, RDS(on) = 0.010 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 86 nC)planar stripe, DMOS technology. Low Crss ( typical 165 pF)This advanced technology has been especially tailored t

Datasheet: FQA6N70 , FQA6N80 , FQA6N90 , FQA7N60 , FQA7N80 , FQA7N80C , FQA7N90 , FQA7N90M , IRFP260N , FQA8N90C , FQA90N10V2 , FQA9N50 , FQA9N90C , FQAF10N80 , FQAF11N40 , FQAF11N90 , FQAF12N60 .

History: NCEP018NH30QU | MMBF4091 | AO3701 | RUH1H139R-A | STP310N10F7

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